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GaNエピタキシャル基板の現状と問題点 : バルク成長シンポジウム
http://hdl.handle.net/10076/8604
http://hdl.handle.net/10076/860443ba01d5-68df-421d-aeb5-564459eada3d
名前 / ファイル | ライセンス | アクション |
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40G6695.pdf (86.5 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2008-03-11 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | GaNエピタキシャル基板の現状と問題点 : バルク成長シンポジウム | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
平松, 和政
× 平松, 和政 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | GaN epitaxial substrates are utilized to fabricate GaN based optical and electronic devices such as LDs, LEDs, photodetectors, FETS etc. However, the GaN includes a large number of dislocations, so considerable efforts have been made towards reducing the dislocation density. In this report, present states and problems of the crystal growth technique of the GaN epitaxial substrate are reviewed. | |||||
書誌情報 |
日本結晶成長学会誌 巻 27, 号 1, p. 14, 発行日 2000-07-01 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0385-6275 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00188386 | |||||
権利 | ||||||
権利情報 | 日本結晶成長学会 | |||||
権利 | ||||||
権利情報 | 本文データは学協会の許諾に基づきCiNiiから複製したものである | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 570 | |||||
その他のタイトル | ||||||
en | ||||||
Present States and Problems of the GaN Epitaxial Substrate | ||||||
出版者 | ||||||
出版者 | 日本結晶成長学会 | |||||
関係URI | ||||||
関連名称 | http://ci.nii.ac.jp/naid/110002715233/ | |||||
資源タイプ(三重大) | ||||||
Conference Paper / 会議発表論文 |