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Systematic theoretical investigation for adsorption behavior of Al and N atoms on 4H-SiC (11-20) surfaces
http://hdl.handle.net/10076/11205
http://hdl.handle.net/10076/112050e1e683b-d10e-496a-b230-d12a1e256695
名前 / ファイル | ライセンス | アクション |
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40A13345.pdf (534.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2010-07-01 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Systematic theoretical investigation for adsorption behavior of Al and N atoms on 4H-SiC (11-20) surfaces | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Nonpolar surface | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | AlN | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | SiC | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Ab initio calculation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | adsorption | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | desorption | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Ito, Takumi
× Ito, Takumi× Akiyama, Toru× Nakamura, Kohji× Ito, Tomonori |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We systematically investigate adsorption behavior of Al and N atoms on 4H–SiC (11-20) surfaces based on first-principles calculations. The calculations for stable adsorption site demonstrate that the Al atom is adsorbed at the lattice site of 4H structure whereas the N atom is incorporated at the interstitial site. The calculated surface phase diagrams for Al and N atoms as functions of beam equivalent pressure and temperature clarify that Al atoms can be adsorbed at all of the adsorption sites below 1800 K and N atoms, in contrast, are desorbed excepting the most stable site above 1150 K. These temperatures imply that under experimental conditions (1223 K) Al atoms can be easily adsorbed and N atoms are adsorbed only on the most stable adsorption site. Furthermore, the calculated barrier heights of adsorbed Al and N atoms are 1.0 and 1.8 eV, respectively, implying that the surface migration of Al atoms is prominent compared to that of N atoms. These results obtained thus manifest that adsorption behavior of Al and N atoms is quite different and the growth processes change depending on V/III ratio under molecular beam epitaxy growth. | |||||
書誌情報 |
Applied surface science : a journal devoted to the properties of interfaces in relation to the synthesis and behaviour of materials 巻 256, 号 4, p. 1160-1163, 発行日 2009-11-30 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0169-4332 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10503400 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.apsusc.2009.05.077 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
出版者 | North-Holland | |||||
関係URI | ||||||
関連名称 | http://dx.doi.org/10.1016/j.apsusc.2009.05.077 | |||||
ノート | ||||||
出版者版電子ジャーナルあり | ||||||
資源タイプ(三重大) | ||||||
Journal Article / 学術雑誌論文 |