伊藤 智徳 , 秋山 亨 , 正直 花奈子 , 河村 貴宏 , 寒川 義裕 , 平松 和政
(2021-06-22)

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伊藤 智徳 , 寒川 義裕
日本結晶成長学会誌,31(1),4-11 (2004-04-30) , Thermodynamic stability for group IV alloy semiconductors

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寒川 義裕 , 伊藤 智徳 , 熊谷 義直 , 纐纈 明伯
日本結晶成長学会誌,30(2),104-110 (2003-06-25) , Influence of Lattice Constraint from Substrate on Relationship between Input Mole Ratio and Solid Composition of InGaN during MBE and MOVPE(<Special issue>The Role of the Substrate in Determining the Properties of Epitaxial Group III Nitrides)

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寒川 義裕 , 伊藤 智徳 , 熊谷 義直 , 纐纈 明伯
日本結晶成長学会誌,29(2),84 (2002-07-01) , Thermodynamic study for relation between solid composition and input ratio of InGaN on GaN and InN

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寒川 義裕 , 伊藤 智徳 , 田口 明仁 , 白石 賢二 , 平岡 佳子 , 入澤 寿美 , 大鉢 忠
日本結晶成長学会誌,29(1),57-64 (2002-04-10) , Ab initio-based Approach to Adsorption-Desorption Behavior during GaAs Epitaxial Growth (<Special Issue>Recent Trend of Crystal Growth Theory)

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伊藤 智徳 , 寒川 義裕
日本結晶成長学会誌,27(1),150 (2000-07-01) , An interatomic potential for nitride semiconductors : application to structural stability

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