A newly developed ab initio-based approach was applied for understanding adsorption-desorption behavior during molecular beam epitaxial growth of GaAs. The ab initiobased approach incorporates free energy of vapor phase; therefore we can calculate how adsorption and desorption depend on growth temperature and beam equivalent pressure (BEP). Versatility of the theoretical approach was confirmed by the calculation of Ga adsorption-desorption transition temperatures and transition BEPs on Ga-rich GaAs (001)-(4×2)β2 surface. Furthermore, in order to check the feasibility of the theoretical approach for prediction of adsorption-desorption behavior of As_2 molecules, the conditions where GaAs(001)-c (4×4) reconstructed structure is stable were investigated by the calculations of stability of As-dimers on the top surface under the various temperatures and BEPs. We also applied the theoretical approach to Ga diffusion length while staying on the GaAs (001)- (2×4)β2 and - (2×4)β1 surfaces and As pressure dependence of GaAs growth rate.
雑誌名
日本結晶成長学会誌
巻
29
号
1
ページ
57 - 64
発行年
2002-04-10
ISSN
0385-6275
書誌レコードID
AN00188386
権利
日本結晶成長学会
本文データは学協会の許諾に基づきCiNiiから複製したものである
フォーマット
application/pdf
著者版フラグ
publisher
日本十進分類法
450
その他のタイトル
Ab initio-based Approach to Adsorption-Desorption Behavior during GaAs Epitaxial Growth (<Special Issue>Recent Trend of Crystal Growth Theory)
GaAsエピタキシャル成長における吸着-脱離現象への理論的アプローチ(<小特集>結晶成長理論の最近の動向)
40A6573.pdf
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