2026-03-09T11:38:14Z https://mie-u.repo.nii.ac.jp/oai

oai:mie-u.repo.nii.ac.jp:00008191 2023-10-13T01:33:00Z 366:638:639

InGaN気相成長における気相-固相関係に対する基板拘束の影響(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考) 寒川, 義裕 Kangawa, Yoshihiro 伊藤, 智徳 Ito, Tomonori 熊谷, 義直 Kumagai, Yoshinao 纐纈, 明伯 Koukitu, Akinori 540 application/pdf Thermodynamic analyses were performed to understand the influence of lattice constraint from InN and GaN substrates on the relationship between input mole ratio R_<In> (=P_<In>^0/ (P_<In>^0 + P_<Ga>^0), where P^0_i is the input partial pressure of element i) and solid composition x in In_xGa_<1-x>N during molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). For the both growth methods, the calculation results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at higher temperatures while that for InGaN on InN can be seen at GaN-rich region due to the lattice constraint from the substrate. In case of the MOVPE, it is found that growth region of InGaN in the diagram related to V/III ratio and solid composition shrinks with increase of V/III ratio (increase of input partial pressure of NH_3). This is because the H_2 partial pressure produced by the decomposition of NH_3 increase at high V/III ratio (at high input partial pressure of NH_3). journal article 日本結晶成長学会 2003-06-25 VoR application/pdf 日本結晶成長学会誌 2 30 104 110 AN00188386 0385-6275 https://mie-u.repo.nii.ac.jp/record/8191/files/40A6575.pdf http://hdl.handle.net/10076/8501 https://mie-u.repo.nii.ac.jp/records/8191 jpn http://ci.nii.ac.jp/naid/110002715831/ 日本結晶成長学会 本文データは学協会の許諾に基づきCiNiiから複製したものである