{"created":"2023-06-19T11:41:17.811470+00:00","id":10006,"links":{},"metadata":{"_buckets":{"deposit":"20ed25d3-dcab-4199-86ef-99c29411eb13"},"_deposit":{"created_by":13,"id":"10006","owners":[13],"pid":{"revision_id":0,"type":"depid","value":"10006"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00010006","sets":["366:676:677"]},"author_link":["24591","24592","24593","24594"],"item_1706510172288":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"寒川, 義裕","creatorNameLang":"ja"},{"creatorName":"KANGAWA, Y","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"伊藤, 智徳","creatorNameLang":"ja"},{"creatorName":"ITO, T","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"森, 篤史","creatorNameLang":"ja"},{"creatorName":"MORI, A","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"纐纐, 明伯","creatorNameLang":"ja"},{"creatorName":"KOUKITU, A","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_3_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-07-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageStart":"152","bibliographicVolumeNumber":"27","bibliographic_titles":[{"bibliographic_title":"日本結晶成長学会誌"}]}]},"item_3_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We carried out excess energy calculations for bulk InGaN, InGaN/GaN and lnGaN/InN in order to investigate the contribution of lattice constraint from the bottom layer to the compositional instability of InGaN. In the epi-layers, asynmetric nature of the excess energy curves as a function of composition is emphasized compared with that for bulk The results suggest that incorporating the contribution of the lattice constraint is indipensable to predict the compositional instability for InGaN grown on substrates.","subitem_description_type":"Abstract"}]},"item_3_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"日本結晶成長学会"}]},"item_3_relation_37":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://ci.nii.ac.jp/naid/110002715369/"}]}]},"item_3_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"日本結晶成長学会"},{"subitem_rights":"本文データは学協会の許諾に基づきCiNiiから複製したものである"}]},"item_3_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0385-6275","subitem_source_identifier_type":"PISSN"}]},"item_3_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00188386","subitem_source_identifier_type":"NCID"}]},"item_3_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"530","subitem_subject_scheme":"NDC"}]},"item_3_text_18":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Contribution of Lattice Constraint to Compositional Instability of InGaN"}]},"item_3_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Conference Paper / 会議発表論文"}]},"item_3_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-20"}],"displaytype":"detail","filename":"40G6569.pdf","filesize":[{"value":"108.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40G6569.pdf","url":"https://mie-u.repo.nii.ac.jp/record/10006/files/40G6569.pdf"},"version_id":"5c3a0706-adb0-4c9f-a683-59dd2555a6a9"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"InGaNの非混和性に対する基板拘束の寄与 : 成長界面III","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"InGaNの非混和性に対する基板拘束の寄与 : 成長界面III","subitem_title_language":"ja"}]},"item_type_id":"3","owner":"13","path":["677"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-02-29"},"publish_date":"2008-02-29","publish_status":"0","recid":"10006","relation_version_is_last":true,"title":["InGaNの非混和性に対する基板拘束の寄与 : 成長界面III"],"weko_creator_id":"13","weko_shared_id":-1},"updated":"2024-01-30T00:36:10.814171+00:00"}