@inproceedings{oai:mie-u.repo.nii.ac.jp:00010007,
 book = {日本結晶成長学会誌},
 issue = {1},
 month = {Jul},
 note = {application/pdf, Structural stability of nitride semiconductors is investigated using an empirical interatomic potential applicable to subtle energy difference between zinc blende and wurtzite structures. The calculated results imply that wurtzite structre is more stable than zinc blende structure by 4.5 (meV/atom) and 7.8 (meV/atom) for GaN and InN, respectively. These results agree well with those obtained by ab initio calculations.},
 publisher = {日本結晶成長学会},
 title = {ナイトライド半導体の構造安定性への原子間ポテンシャルの適用 : 成長界面III},
 volume = {27},
 year = {2000}
}