{"created":"2023-06-19T11:41:17.853891+00:00","id":10007,"links":{},"metadata":{"_buckets":{"deposit":"f36ee722-8793-4d66-8436-7e40e9efd2da"},"_deposit":{"created_by":13,"id":"10007","owners":[13],"pid":{"revision_id":0,"type":"depid","value":"10007"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00010007","sets":["366:676:677"]},"author_link":["24599","24600"],"item_1706510172288":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"伊藤, 智徳","creatorNameLang":"ja"},{"creatorName":"Ito, Tomonori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"寒川, 義裕","creatorNameLang":"ja"},{"creatorName":"Kangawa, Yoshihiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_3_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-07-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageStart":"150","bibliographicVolumeNumber":"27","bibliographic_titles":[{"bibliographic_title":"日本結晶成長学会誌"}]}]},"item_3_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Structural stability of nitride semiconductors is investigated using an empirical interatomic potential applicable to subtle energy difference between zinc blende and wurtzite structures. The calculated results imply that wurtzite structre is more stable than zinc blende structure by 4.5 (meV/atom) and 7.8 (meV/atom) for GaN and InN, respectively. These results agree well with those obtained by ab initio calculations.","subitem_description_type":"Abstract"}]},"item_3_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"日本結晶成長学会"}]},"item_3_relation_37":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://ci.nii.ac.jp/naid/110002715367/"}]}]},"item_3_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"日本結晶成長学会"},{"subitem_rights":"本文データは学協会の許諾に基づきCiNiiから複製したものである"}]},"item_3_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0385-6275","subitem_source_identifier_type":"PISSN"}]},"item_3_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00188386","subitem_source_identifier_type":"NCID"}]},"item_3_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"540","subitem_subject_scheme":"NDC"}]},"item_3_text_18":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"An interatomic potential for nitride semiconductors : application to structural stability"}]},"item_3_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Conference Paper / 会議発表論文"}]},"item_3_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-20"}],"displaytype":"detail","filename":"40G6570.pdf","filesize":[{"value":"79.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40G6570.pdf","url":"https://mie-u.repo.nii.ac.jp/record/10007/files/40G6570.pdf"},"version_id":"09f8b414-99b5-48f6-b9d6-0685ce15404b"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"ナイトライド半導体の構造安定性への原子間ポテンシャルの適用 : 成長界面III","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ナイトライド半導体の構造安定性への原子間ポテンシャルの適用 : 成長界面III","subitem_title_language":"ja"}]},"item_type_id":"3","owner":"13","path":["677"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-02-29"},"publish_date":"2008-02-29","publish_status":"0","recid":"10007","relation_version_is_last":true,"title":["ナイトライド半導体の構造安定性への原子間ポテンシャルの適用 : 成長界面III"],"weko_creator_id":"13","weko_shared_id":-1},"updated":"2024-01-30T00:36:10.703675+00:00"}