@inproceedings{oai:mie-u.repo.nii.ac.jp:00010008,
 book = {日本結晶成長学会誌},
 issue = {1},
 month = {Jul},
 note = {application/pdf, Combining the two approaches of the phenomenological theory and the atomistic analysis, we clarified the characteristics of the hetero-epitaxial growth, focusing on the misfit dislocation generated at the semiconductor interfaces. We apply these theories to GaSb/GaAs(001) system. In the atomistic analysis we found a 5&7 membered ring structure at the dislocation core by using first-principles calculations.},
 publisher = {日本結晶成長学会},
 title = {半導体格子不整合系でのエピタキシー成長とミスフィット転位 : 成長界面III},
 volume = {27},
 year = {2000}
}