@inproceedings{oai:mie-u.repo.nii.ac.jp:00010009,
 book = {日本結晶成長学会誌},
 issue = {2},
 month = {Jul},
 note = {application/pdf, Thermodynamic analyses were carried out to understand compositional instability of InGaN/GaN and InGaN/InN in the MBE growth. In the thermodynamic analysis, contribution of lattice constraint from bottom layer was incorporated using enthalpy of mixing of InGaN/GaN and InGaN/InN, ΔH_m^<InGaN/GaN> and ΔH_m^<InGaN/InN>, which can be obtained by empirical interatomic potential calculations. The results suggest that compositional unstable region for InGaN/InN shifted toward Ga-rich side compared with that for InGaN/GaN. This implies that homogeneous InGaN thin films with large indium mole fraction is possible to form on InN substrate.},
 publisher = {日本結晶成長学会},
 title = {InGaN/GaNおよびInGaN/InN気相成長における気相-固相関係 : 結晶成長理論シンポジウム},
 volume = {29},
 year = {2002}
}