@inproceedings{oai:mie-u.repo.nii.ac.jp:00010028,
 book = {日本結晶成長学会誌},
 issue = {1},
 month = {Jul},
 note = {application/pdf, GaN epitaxial substrates are utilized to fabricate GaN based optical and electronic devices such as LDs, LEDs, photodetectors, FETS etc. However, the GaN includes a large number of dislocations, so considerable efforts have been made towards reducing the dislocation density. In this report, present states and problems of the crystal growth technique of the GaN epitaxial substrate are reviewed.},
 publisher = {日本結晶成長学会},
 title = {GaNエピタキシャル基板の現状と問題点 : バルク成長シンポジウム},
 volume = {27},
 year = {2000}
}