{"created":"2023-06-19T11:41:18.738150+00:00","id":10028,"links":{},"metadata":{"_buckets":{"deposit":"2dd904a5-ee9f-4cc2-b69f-bb8e912ce5ca"},"_deposit":{"created_by":13,"id":"10028","owners":[13],"pid":{"revision_id":0,"type":"depid","value":"10028"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00010028","sets":["366:676:677"]},"author_link":["24721"],"item_1706510172288":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"平松, 和政","creatorNameLang":"ja"},{"creatorName":"Hiramatsu, Kazumasa","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_3_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-07-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageStart":"14","bibliographicVolumeNumber":"27","bibliographic_titles":[{"bibliographic_title":"日本結晶成長学会誌"}]}]},"item_3_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"GaN epitaxial substrates are utilized to fabricate GaN based optical and electronic devices such as LDs, LEDs, photodetectors, FETS etc. However, the GaN includes a large number of dislocations, so considerable efforts have been made towards reducing the dislocation density. In this report, present states and problems of the crystal growth technique of the GaN epitaxial substrate are reviewed.","subitem_description_type":"Abstract"}]},"item_3_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"日本結晶成長学会"}]},"item_3_relation_37":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://ci.nii.ac.jp/naid/110002715233/"}]}]},"item_3_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"日本結晶成長学会"},{"subitem_rights":"本文データは学協会の許諾に基づきCiNiiから複製したものである"}]},"item_3_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0385-6275","subitem_source_identifier_type":"PISSN"}]},"item_3_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00188386","subitem_source_identifier_type":"NCID"}]},"item_3_subject_16":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"570","subitem_subject_scheme":"NDC"}]},"item_3_text_18":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Present States and Problems of the GaN Epitaxial Substrate"}]},"item_3_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Conference Paper / 会議発表論文"}]},"item_3_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-20"}],"displaytype":"detail","filename":"40G6695.pdf","filesize":[{"value":"86.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40G6695.pdf","url":"https://mie-u.repo.nii.ac.jp/record/10028/files/40G6695.pdf"},"version_id":"519a71e8-e10a-472a-a4be-8ee5ce68cb04"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"GaNエピタキシャル基板の現状と問題点 : バルク成長シンポジウム","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaNエピタキシャル基板の現状と問題点 : バルク成長シンポジウム","subitem_title_language":"ja"}]},"item_type_id":"3","owner":"13","path":["677"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-03-11"},"publish_date":"2008-03-11","publish_status":"0","recid":"10028","relation_version_is_last":true,"title":["GaNエピタキシャル基板の現状と問題点 : バルク成長シンポジウム"],"weko_creator_id":"13","weko_shared_id":-1},"updated":"2024-01-30T00:36:54.623384+00:00"}