{"created":"2023-06-19T11:41:20.760361+00:00","id":10076,"links":{},"metadata":{"_buckets":{"deposit":"8f8af068-51c3-4183-b085-a4d2b01f5688"},"_deposit":{"created_by":15,"id":"10076","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"10076"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00010076","sets":["366:680:1692684998585"]},"author_link":["24978","24979","24980"],"item_8_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2012-05-17","bibliographicIssueDateType":"Issued"}}]},"item_8_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_8_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"本研究では、連続広帯域スペクトルを有する白色LEDを開発することにより、「波長ばらつきの問題」と「演色性の問題」を同時に解決し、照明に適したLEDの実現を目指すことを目的として、a面GaN上への選択成長とm面の平坦なGaN膜の作製を行った。成長温度と成長圧力を制御することで、ファセットを制御した選択成長を行うことができ、さらにこの知見を利用して、m面の平坦なGaN膜を得ることができた。これらの成果を活用すれば、連続広帯域スペクトルを有する白色LEDの開発が可能になる。","subitem_description_type":"Abstract"},{"subitem_description":"In this study, in order to solve the fluctuation of the light emitting wave length and color rendering properties, the selective area growth on a plane GaN and the fabrication of the flat m-plane GaN are carried out aiming at the development of the white LED with continuous and wide wavelength range. By controlling growth temperature and growth pressure, the facet controlled structures can be fabricated. Also by using this technique, the flat m-plane GaN can be obtained. From these results, The development of the white LED with continuous and wide wavelength range can be realized.","subitem_description_type":"Abstract"}]},"item_8_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"平成21~23年度科学研究費補助金(基盤研究(B))研究成果報告書","subitem_description_type":"Other"}]},"item_8_description_64":{"attribute_name":"科研費番号","attribute_value_mlt":[{"subitem_description":"21360007","subitem_description_type":"Other"}]},"item_8_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"三重大学"}]},"item_8_text_18":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_text_value":"Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectra"}]},"item_8_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Kaken / 科研費報告書"}]},"item_8_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"平松, 和政","creatorNameLang":"ja"},{"creatorName":"HIRAMATSU, Kazumasa","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"三宅, 秀人","creatorNameLang":"ja"},{"creatorName":"MIYAKE, Hideto","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"元垣内, 敦司","creatorNameLang":"ja"},{"creatorName":"MOTOGAITO, Atsushi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-20"}],"displaytype":"detail","filename":"40K16767.pdf","filesize":[{"value":"379.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40K16767.pdf","url":"https://mie-u.repo.nii.ac.jp/record/10076/files/40K16767.pdf"},"version_id":"7d936e95-6ba4-44f9-9535-d1011f610953"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"エピタキシャル成長","subitem_subject_scheme":"Other"},{"subitem_subject":"選択成長","subitem_subject_scheme":"Other"},{"subitem_subject":"非極性","subitem_subject_scheme":"Other"},{"subitem_subject":"窒化物半導体","subitem_subject_scheme":"Other"},{"subitem_subject":"発光ダイオード","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"窒化物半導体ファセット変調構造の創製と広帯域・連続スペクトル白色ＬＥＤの開発","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"窒化物半導体ファセット変調構造の創製と広帯域・連続スペクトル白色ＬＥＤの開発","subitem_title_language":"ja"}]},"item_type_id":"8","owner":"15","path":["1692684998585"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2014-03-10"},"publish_date":"2014-03-10","publish_status":"0","recid":"10076","relation_version_is_last":true,"title":["窒化物半導体ファセット変調構造の創製と広帯域・連続スペクトル白色ＬＥＤの開発"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-11-15T00:29:32.791283+00:00"}