{"created":"2023-06-19T11:41:22.533707+00:00","id":10118,"links":{},"metadata":{"_buckets":{"deposit":"b03e6143-f271-4109-8402-2b5850d40cdc"},"_deposit":{"created_by":15,"id":"10118","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"10118"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00010118","sets":["366:680:1692685139729"]},"author_link":["25157","25158"],"item_8_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-05-18","bibliographicIssueDateType":"Issued"}}]},"item_8_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_8_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"量子論的アプローチにより，GaAs(001)上のInA-(2×3)ぬれ層を中心に，成長条件である温度，分子線圧力を考慮した，表面構造ならびに吸着・脱離を含む成長過程について検討した。その結果，従来安定と考えられていたぬれ層表面構造である(2x3)表面は成長条件下で不安定であること，(2x3)表面上ではInAs成長は進行しないことを明らかにした。これは，In 原子の吸着によって生じる，表面での大きなひずみに起因すると考えられる。このひずみを緩和するために，ダイマー欠損を有する(4x3)表面が出現し，In-Asダイマー形成，Asダイマー脱離を繰り返すことで成長が進行することを見いだした。","subitem_description_type":"Abstract"},{"subitem_description":"We have systematically investigated structural change in InAs(001)-(2×3) wetting layer surfaces as functions of temperature and beam-equivalent pressure using ab initio-based approach. We found that the (2×3) surface is unstable and does not incorporate In atoms to prevent InAs growth at　the conventional growth conditions. This is due to the large strain induced by In adsorption on the wetting layer surface. In order to reduce the large strain, a (4x3) surface appears with missing surface dimer where In atom favorably occupies to form In-As dimer and proceed InAs growth on the wetting layer.","subitem_description_type":"Abstract"}]},"item_8_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"2012年度～2014年度科学研究費補助金(基盤研究(C))研究成果報告書","subitem_description_type":"Other"}]},"item_8_description_64":{"attribute_name":"科研費番号","attribute_value_mlt":[{"subitem_description":"24560025","subitem_description_type":"Other"}]},"item_8_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"三重大学"}]},"item_8_text_18":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_text_value":"Physics in wetting layer on bond engineering"}]},"item_8_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Kaken / 科研費報告書"}]},"item_8_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"伊藤, 智徳","creatorNameLang":"ja"},{"creatorName":"ITO, Tomonori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"秋山, 亨","creatorNameLang":"ja"},{"creatorName":"AKIYAMA, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-20"}],"displaytype":"detail","filename":"40K17853.pdf","filesize":[{"value":"522.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40K17853.pdf","url":"https://mie-u.repo.nii.ac.jp/record/10118/files/40K17853.pdf"},"version_id":"67166f62-37b0-4bec-a8b0-310e67a1cfab"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"量子論的アプローチ","subitem_subject_scheme":"Other"},{"subitem_subject":"半導体ぬれ層","subitem_subject_scheme":"Other"},{"subitem_subject":"吸着・脱離","subitem_subject_scheme":"Other"},{"subitem_subject":"成長過程","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"ボンドエンジニアリングによる「ぬれ層の物理」構築","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ボンドエンジニアリングによる「ぬれ層の物理」構築","subitem_title_language":"ja"}]},"item_type_id":"8","owner":"15","path":["1692685139729"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2017-01-13"},"publish_date":"2017-01-13","publish_status":"0","recid":"10118","relation_version_is_last":true,"title":["ボンドエンジニアリングによる「ぬれ層の物理」構築"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-11-17T02:34:00.806138+00:00"}