{"created":"2023-06-19T11:43:40.326272+00:00","id":13303,"links":{},"metadata":{"_buckets":{"deposit":"cc68219d-0833-4a5c-9d93-787d26fd104e"},"_deposit":{"created_by":15,"id":"13303","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"13303"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00013303","sets":["366:680:1692685142618"]},"author_link":["43400"],"item_8_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-05-08","bibliographicIssueDateType":"Issued"}}]},"item_8_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_8_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"本研究では大型バルクGaN単結晶の開発に向け、Naフラックス法とOVPE法における結晶成長機構を明らかにすることを目的として、第一原理計算を用いた数値解析により、(1)Naフラックス成長におけるC添加による成長速度増加メカニズムの解明と(2)OVPE法における表面反応過程と結晶成長過程の解明、の2つの研究を行った。その結果、(1)ではC添加Naフラックス溶液中で安定に存在するCNイオンが結晶表面近傍ではC-N結合が分解しやすくなることを明らかにした。また(2)ではOVPE成長条件下における安定な結晶表面楮の解析を行い、結晶表面からのO不純物の脱離エネルギーの解析を行った。","subitem_description_type":"Abstract"},{"subitem_description":"For the development of large bulk GaN single crystal, we carried out numerical analysis using first-principles calculations aimed at clarifying the crystal growth mechanism in Na flux method and OVPE method. First we investigated the effect of C addition on increase in growth rate and found that the CN ions those stably existed in the C-added Na-Ga melts dissociate in the vicinity of GaN crystal surface. Next, we investigated the stable surface structures of the polar, non-polar, and semi-polar GaN surfaces and estimated desorption energies of oxygen impurities from the GaN crystal surfaces.","subitem_description_type":"Abstract"}]},"item_8_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"2015年度～2017年度科学研究費補助金(若手研究(B))研究成果報告書","subitem_description_type":"Other"}]},"item_8_description_64":{"attribute_name":"科研費番号","attribute_value_mlt":[{"subitem_description":"15K17459","subitem_description_type":"Other"}]},"item_8_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"三重大学"}]},"item_8_text_31":{"attribute_name":"出版者（ヨミ）","attribute_value_mlt":[{"subitem_text_value":"ミエダイガク"}]},"item_8_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Kaken / 科研費報告書"}]},"item_8_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"河村, 貴宏","creatorNameLang":"ja"},{"creatorName":"カワムラ, タカヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Kawamura, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-22"}],"displaytype":"detail","filename":"2019RP0083.pdf","filesize":[{"value":"841.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"2019RP0083","url":"https://mie-u.repo.nii.ac.jp/record/13303/files/2019RP0083.pdf"},"version_id":"08b4d10c-c226-470d-a388-234551e9b818"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"窒化ガリウム","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"第一原理計算","subitem_subject_scheme":"Other"},{"subitem_subject":"Naフラックス成長","subitem_subject_scheme":"Other"},{"subitem_subject":"OVPE成長","subitem_subject_scheme":"Other"},{"subitem_subject":"不純物","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"大型バルクGaN単結晶の開発に向けた結晶成長機構の解明","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"大型バルクGaN単結晶の開発に向けた結晶成長機構の解明","subitem_title_language":"ja"},{"subitem_title":"Clarification of crystal growth mechanism for development of large bulk GaN single crystal","subitem_title_language":"en"}]},"item_type_id":"8","owner":"15","path":["1692685142618"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-01-22"},"publish_date":"2020-01-22","publish_status":"0","recid":"13303","relation_version_is_last":true,"title":["大型バルクGaN単結晶の開発に向けた結晶成長機構の解明"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-11-20T00:47:47.824346+00:00"}