{"created":"2023-06-19T11:44:34.813060+00:00","id":14549,"links":{},"metadata":{"_buckets":{"deposit":"bd60b3d8-32a3-4683-8802-0f17fc367f95"},"_deposit":{"created_by":15,"id":"14549","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"14549"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00014549","sets":["366:680:1692685146800"]},"author_link":[],"item_8_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-05-15","bibliographicIssueDateType":"Issued"}}]},"item_8_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_8_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"SiGe等の二元系混晶原子層膜およびCSiGeおよびSiGeSn等の三元系原子層物質において、これらの混晶における混和性は成長基板による格子拘束により大きく変化し、組成によっては混和性が改善することを見出した。これら原子層物質のバンド構造も計算し、組成に依存して直接遷移型の半導体あるいはグラフェンと同様のディラックコーンを持つゼロギャップ半導体になり得ることを明らかにした。さらに、III-V族およびII-VI族等の化合物半導体を対象とした検討も行い、特に窒化物半導体において膜厚が薄い場合ではバルク状態では準安定構造であるヘキサゴナル構造が安定となることを見出した。","subitem_description_type":"Abstract"},{"subitem_description":"In this research project, we found that the miscibility of alloy monolayer thin films such as SiGe and ternary monolayer thin films such as CSiGe and SiGeSn is greatly changed by lattice constraint by the growth substrate. The miscibility is improved depending on the composition. The band structures of these monolayer thin films were also examined. They possess a direct bandgap or a zero gap semiconductor with Dirac cone like graphene depending on the composition. Furthermore, we investigated the structures of compound semiconductors such group III-V and group II-VI materials, and clarified that the hexagonal structure, which is one of metastable structure in bulk phase, becomes stable when the thickness of a nitride semiconductor is small.","subitem_description_type":"Abstract"}]},"item_8_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"2017年度～2019年度科学研究費補助金(基盤研究(C))研究成果報告書","subitem_description_type":"Other"}]},"item_8_description_64":{"attribute_name":"科研費番号","attribute_value_mlt":[{"subitem_description":"17K05056","subitem_description_type":"Other"}]},"item_8_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"三重大学"}]},"item_8_text_31":{"attribute_name":"出版者（ヨミ）","attribute_value_mlt":[{"subitem_text_value":"ミエダイガク"}]},"item_8_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Kaken / 科研費報告書"}]},"item_8_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"秋山, 亨","creatorNameLang":"ja"},{"creatorName":"アキヤマ, トオル","creatorNameLang":"ja-Kana"},{"creatorName":"Akiyama, Toru","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-01-24"}],"displaytype":"detail","filename":"2021RP0083.pdf","filesize":[{"value":"573.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"2021RP0083","url":"https://mie-u.repo.nii.ac.jp/record/14549/files/2021RP0083.pdf"},"version_id":"6f19c016-8f2f-4e86-a4d9-3819281aaeff"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"原子層物質","subitem_subject_scheme":"Other"},{"subitem_subject":"第一原理計算","subitem_subject_scheme":"Other"},{"subitem_subject":"2層ハニカム構造","subitem_subject_scheme":"Other"},{"subitem_subject":"トポロジカル絶縁体","subitem_subject_scheme":"Other"},{"subitem_subject":"混晶","subitem_subject_scheme":"Other"},{"subitem_subject":"混和性","subitem_subject_scheme":"Other"},{"subitem_subject":"III-V族","subitem_subject_scheme":"Other"},{"subitem_subject":"II-VI族","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"ボンドエンジニアリングによるⅣ族系混晶原子層物質のマテリアルデザイン","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ボンドエンジニアリングによるⅣ族系混晶原子層物質のマテリアルデザイン","subitem_title_language":"ja"},{"subitem_title":"Material design of group-IV alloy monolayers using bond engineering concept","subitem_title_language":"en"}]},"item_type_id":"8","owner":"15","path":["1692685146800"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-01-24"},"publish_date":"2022-01-24","publish_status":"0","recid":"14549","relation_version_is_last":true,"title":["ボンドエンジニアリングによるⅣ族系混晶原子層物質のマテリアルデザイン"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-11-20T01:43:41.598136+00:00"}