{"created":"2023-06-19T11:45:05.403882+00:00","id":15309,"links":{},"metadata":{"_buckets":{"deposit":"3dcb594c-f351-4fb6-bd0d-7c50a428b405"},"_deposit":{"created_by":15,"id":"15309","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"15309"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00015309","sets":["366:680:1692685258258"]},"author_link":["50703"],"item_8_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-04-30","bibliographicIssueDateType":"Issued"}}]},"item_8_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_8_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"本研究ではOVPE法によるバルクGaN単結晶の成長機構の解明を目的として、第一原理計算を用いて(1) O不純物の吸着・脱離反応を含めたGaN成長プロセスの解明と(2) GaN成長における表面再構成とその面方位依存性に関する解析、の2つの研究を行った。(1)ではGaN結晶表面に吸着したO不純物の脱離エネルギーは大きく、OとOHの形では脱離は起こりにくいがH2Oに還元することで脱離しやすくなることを示した。(2)ではOVPE成長条件下ではGa分圧が増加するにしたがってO不純物を取り込みやすい(1-101)表面構造が現れやすくなることから、結晶に取り込まれるO不純物量が増加することを示した。","subitem_description_type":"Abstract"},{"subitem_description":"We carried out first-principles calculations to clarify the GaN crystal growth mechanism in OVPE method. First, we examined O adsorption and desorption on the GaN surface with kink, step, and terrace structures and found that O and OH hardly desorbs from the GaN surface. Second, we simulated surface reconstruction on the polar, nonpolar, and semi-polar surface. The relationships of stable surface orientations and surface structures with the growth conditions of Ga pressure and temperature were examined. It was shown that as the Ga partial pressure increases, the (1-101) reconstructed surface with O impurity is more likely to appear, so that the amount of O impurities also increase.","subitem_description_type":"Abstract"}]},"item_8_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"2018年度～2020年度科学研究費補助金(基盤研究(C))研究成果報告書","subitem_description_type":"Other"}]},"item_8_description_64":{"attribute_name":"科研費番号","attribute_value_mlt":[{"subitem_description":"18K04957","subitem_description_type":"Other"}]},"item_8_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"三重大学"}]},"item_8_text_31":{"attribute_name":"出版者（ヨミ）","attribute_value_mlt":[{"subitem_text_value":"ミエダイガク"}]},"item_8_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Kaken / 科研費報告書"}]},"item_8_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"河村, 貴宏","creatorNameLang":"ja"},{"creatorName":"カワムラ, タカヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Kawamura, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-11-29"}],"displaytype":"detail","filename":"2022RP0070.pdf","filesize":[{"value":"762.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"2022RP0070","url":"https://mie-u.repo.nii.ac.jp/record/15309/files/2022RP0070.pdf"},"version_id":"d1a50349-23cd-42f2-a23e-cd73575dbb88"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"窒化ガリウム","subitem_subject_scheme":"Other"},{"subitem_subject":"第一原理計算","subitem_subject_scheme":"Other"},{"subitem_subject":"不純物","subitem_subject_scheme":"Other"},{"subitem_subject":"OVPE成長","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"高品質バルクGaN成長に適した気相成長条件および結晶成長プロセスの解明","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"高品質バルクGaN成長に適した気相成長条件および結晶成長プロセスの解明","subitem_title_language":"ja"},{"subitem_title":"Investigation of vapor phase epitaxy growth conditions for high quality bulk GaN and their crystal growth process","subitem_title_language":"en"}]},"item_type_id":"8","owner":"15","path":["1692685258258"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-11-29"},"publish_date":"2022-11-29","publish_status":"0","recid":"15309","relation_version_is_last":true,"title":["高品質バルクGaN成長に適した気相成長条件および結晶成長プロセスの解明"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-11-20T02:11:52.395832+00:00"}