{"created":"2023-06-19T11:45:05.978720+00:00","id":15322,"links":{},"metadata":{"_buckets":{"deposit":"56fbe799-4ba4-4d54-bc28-eeb531a89789"},"_deposit":{"created_by":15,"id":"15322","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"15322"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00015322","sets":["515:756:1692664592836"]},"author_link":["50760","50761","50762"],"item_8_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-07-04","bibliographicIssueDateType":"Issued"}}]},"item_8_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_8_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"特異構造の結晶成長，結晶制御を実験的視点と理論的視点から深化する科学と，その応用としてエレクトロニクス展開を目指している研究を行った。\n2次元特異構造としての高品質なAlN膜をサファイア基板上で作製する技術は極めて重要であるが、サファイア基板上のAlN膜には高密度の貫通転位が存在する。スパッタ法AlNに高温アニールを用いることで、AlNの結晶性が大幅に改善できること見出し、そのメカニズムを明らかにした。また、スパッタ・アニールを行ったAlNテンプレートを用いて、深紫外LEDや高速電子移動度トランジスタの作製を行い、高品質AlNテンプレートの有用性を示した。","subitem_description_type":"Abstract"},{"subitem_description":"We conducted research aimed at developing electronic applications of science that deepens crystal growth and crystal control of singular structures. The technique of producing a high-quality AlN film as a two-dimensional singular structure on a sapphire substrate is extremely important, but the AlN film on the sapphire substrate has high-density penetrating dislocations. We found that the crystallinity of AlN can be significantly improved by using high-temperature annealing of sputtering-deposited AlN on a sapphie, and clarified the mechanism. In addition, deep-ultraviolet LEDs and high-speed electron mobility transistors were manufactured using sputtered and annealed AlN templates, demonstrating the usefulness of high-quality AlN templates.","subitem_description_type":"Abstract"}]},"item_8_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"2016年度～2020年度科学研究費補助金(新学術領域研究(研究領域提案型))研究成果報告書","subitem_description_type":"Other"}]},"item_8_description_64":{"attribute_name":"科研費番号","attribute_value_mlt":[{"subitem_description":"16H06415","subitem_description_type":"Other"}]},"item_8_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"三重大学"}]},"item_8_text_31":{"attribute_name":"出版者（ヨミ）","attribute_value_mlt":[{"subitem_text_value":"ミエダイガク"}]},"item_8_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Kaken / 科研費報告書"}]},"item_8_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"三宅, 秀人","creatorNameLang":"ja"},{"creatorName":"ミヤケ, ヒデト","creatorNameLang":"ja-Kana"},{"creatorName":"Miyake, Hideto","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"50760","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"宮川, 鈴衣奈","creatorNameLang":"ja"},{"creatorName":"ミヤガワ, レイナ","creatorNameLang":"ja-Kana"},{"creatorName":"Miyagawa, Reina","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"50761","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"荒木, 努","creatorNameLang":"ja"},{"creatorName":"アラキ, ツトム","creatorNameLang":"ja-Kana"},{"creatorName":"Araki, Tsutomu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"50762","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-11-29"}],"displaytype":"detail","filename":"2022RP0083.pdf","filesize":[{"value":"1.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"2022RP0083","url":"https://mie-u.repo.nii.ac.jp/record/15322/files/2022RP0083.pdf"},"version_id":"a5724755-a700-422e-9a85-7d97bf60fbbf"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"窒化物半導体","subitem_subject_scheme":"Other"},{"subitem_subject":"高温アニール","subitem_subject_scheme":"Other"},{"subitem_subject":"窒化アルミニウム","subitem_subject_scheme":"Other"},{"subitem_subject":"AlN","subitem_subject_scheme":"Other"},{"subitem_subject":"AlGaN","subitem_subject_scheme":"Other"},{"subitem_subject":"深紫外LED","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"平衡状態に基づくトップダウン法による特異構造の創製","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"平衡状態に基づくトップダウン法による特異構造の創製","subitem_title_language":"ja"},{"subitem_title":"Creation of singularity structure by top-down method based on thermal equiburium condition","subitem_title_language":"en"}]},"item_type_id":"8","owner":"15","path":["1692664592836"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2022-11-29"},"publish_date":"2022-11-29","publish_status":"0","recid":"15322","relation_version_is_last":true,"title":["平衡状態に基づくトップダウン法による特異構造の創製"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-11-22T00:12:22.654279+00:00"}