@article{oai:mie-u.repo.nii.ac.jp:00005053,
 author = {Miyake, Hideto and 三宅, 秀人 and Sugiyama, Koichi and 杉山, 耕一 and Hiramatsu, Kazumasa and 平松, 和政},
 journal = {Research reports of the Faculty of Engineering, Mie University},
 month = {Dec},
 note = {application/pdf, The traveling heater method (THM), which is one of the solution growth techniques, has been applied to the single crystal growth of the I-III-VI₂ chalcopyrite semiconductors. It is generally difficult to grow high-quality single crystals of the I-III-VI₂ compounds from the stoichiometric melts, because most of the compounds grow through a peritectic reaction or a solid state transition during the cooling process. Up to this time, bulk single crystals of CuGaS₂, CuGaSe₂, CuGaTe₂, CuInS₂, CuInSe₂, and CuInTe₂ ternary compounds have been obtained by the THM technique using In solvent. Bulk single crystals of CuGaₓIn₁₋ₓS₂ and CuGaₓIn₁₋ₓSe₂ quaternary alloys have also been grown by the THM with In-solution zones, in which the compositions were adjusted to obtain homogenous crystals having intended compositions x. Furthermore, THM growth of AgGaS₂ and CuGaS₂ single crystals has been performed by using PbCl₂ and CuI halide solvents, respectively.},
 pages = {31--44},
 title = {THM Growth of Ternary and Multinary Chalcopyrite Semiconductors},
 volume = {24},
 year = {1999}
}