{"created":"2023-06-19T11:37:39.602892+00:00","id":5053,"links":{},"metadata":{"_buckets":{"deposit":"154a508a-cf34-47f4-8a07-52a268ffee59"},"_deposit":{"created_by":13,"id":"5053","owners":[13],"pid":{"revision_id":0,"type":"depid","value":"5053"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00005053","sets":["366:367:368:392"]},"author_link":["10879","10880","10881"],"item_4_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-12-27","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"44","bibliographicPageStart":"31","bibliographicVolumeNumber":"24","bibliographic_titles":[{"bibliographic_title":"Research reports of the Faculty of Engineering, Mie University"}]}]},"item_4_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_4_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The traveling heater method (THM), which is one of the solution growth techniques, has been applied to the single crystal growth of the I-III-VI₂ chalcopyrite semiconductors. It is generally difficult to grow high-quality single crystals of the I-III-VI₂ compounds from the stoichiometric melts, because most of the compounds grow through a peritectic reaction or a solid state transition during the cooling process. Up to this time, bulk single crystals of CuGaS₂, CuGaSe₂, CuGaTe₂, CuInS₂, CuInSe₂, and CuInTe₂ ternary compounds have been obtained by the THM technique using In solvent. Bulk single crystals of CuGaₓIn₁₋ₓS₂ and CuGaₓIn₁₋ₓSe₂ quaternary alloys have also been grown by the THM with In-solution zones, in which the compositions were adjusted to obtain homogenous crystals having intended compositions x. Furthermore, THM growth of AgGaS₂ and CuGaS₂ single crystals has been performed by using PbCl₂ and CuI halide solvents, respectively.","subitem_description_type":"Abstract"}]},"item_4_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Faculty of Engineering, Mie University"}]},"item_4_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0385-6208","subitem_source_identifier_type":"PISSN"}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00816341","subitem_source_identifier_type":"NCID"}]},"item_4_text_18":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_text_language":"ja","subitem_text_value":"三元および多元カルコパイライト型半導体のTHM成長"}]},"item_4_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Departmental Bulletin Paper / 紀要論文"}]},"item_4_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Miyake, Hideto","creatorNameLang":"en"},{"creatorName":"三宅, 秀人","creatorNameLang":"ja"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sugiyama, Koichi","creatorNameLang":"en"},{"creatorName":"杉山, 耕一","creatorNameLang":"ja"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hiramatsu, Kazumasa","creatorNameLang":"en"},{"creatorName":"平松, 和政","creatorNameLang":"ja"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-18"}],"displaytype":"detail","filename":"AA008163410240006.PDF","filesize":[{"value":"2.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"AA008163410240006.PDF","url":"https://mie-u.repo.nii.ac.jp/record/5053/files/AA008163410240006.PDF"},"version_id":"e4d57809-d28a-40ae-a547-1874e7cfb4d6"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Chalcopyrite semiconductors","subitem_subject_scheme":"Other"},{"subitem_subject":"I-III-VI₂ compounds","subitem_subject_scheme":"Other"},{"subitem_subject":"Single crystal growth","subitem_subject_scheme":"Other"},{"subitem_subject":"Traveling heater method (THM)","subitem_subject_scheme":"Other"},{"subitem_subject":"Solution growth","subitem_subject_scheme":"Other"},{"subitem_subject":"Copper indium diselenide","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"THM Growth of Ternary and Multinary Chalcopyrite Semiconductors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"THM Growth of Ternary and Multinary Chalcopyrite Semiconductors","subitem_title_language":"en"}]},"item_type_id":"4","owner":"13","path":["392"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-07-02"},"publish_date":"2007-07-02","publish_status":"0","recid":"5053","relation_version_is_last":true,"title":["THM Growth of Ternary and Multinary Chalcopyrite Semiconductors"],"weko_creator_id":"13","weko_shared_id":-1},"updated":"2023-10-05T07:20:35.808111+00:00"}