@article{oai:mie-u.repo.nii.ac.jp:00005066,
 author = {SATO, Hideki and 佐藤, 英樹 and MIZUNO, Shigeru and 水野, 茂},
 journal = {Research reports of the Faculty of Engineering, Mie University},
 month = {Dec},
 note = {application/pdf, This paper reports the Biased Directional Sputtering (BDS), which is a high directional sputtering technique using RF magnetron plasma and a substrate bias, for formation of barrier metals (Ti, TiN, Ta and TaN) for semiconductor devices. The RF magnetron plasma, which is denser than conventional DC magnetron plasma, ionizes sputtered metal atoms efficiently, and the substrate bias accelerates the ionized metal atoms perpendicularly to the substrate surface. Experimental results show that the plasma density of the BDS is higher than that of the conventional DC magnetron plasma. The ionization rate of the sputtered metal atoms reaches more than 90% at 13Pa. Consequently, excellent step coverage is obtained for high aspect ratio (AR) holes by the BDS deposition.},
 pages = {17--26},
 title = {Development of Biased Directional Sputtering(BDS) for Semiconductor Devices},
 volume = {25},
 year = {2000}
}