{"created":"2023-06-19T11:37:40.155867+00:00","id":5066,"links":{},"metadata":{"_buckets":{"deposit":"8911c798-de8f-4655-a7e1-c3ad574e2c5b"},"_deposit":{"created_by":13,"id":"5066","owners":[13],"pid":{"revision_id":0,"type":"depid","value":"5066"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00005066","sets":["366:367:368:393"]},"author_link":["10901","10902"],"item_4_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-12-27","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"26","bibliographicPageStart":"17","bibliographicVolumeNumber":"25","bibliographic_titles":[{"bibliographic_title":"Research reports of the Faculty of Engineering, Mie University"}]}]},"item_4_description_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_4_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"This paper reports the Biased Directional Sputtering (BDS), which is a high directional sputtering technique using RF magnetron plasma and a substrate bias, for formation of barrier metals (Ti, TiN, Ta and TaN) for semiconductor devices. The RF magnetron plasma, which is denser than conventional DC magnetron plasma, ionizes sputtered metal atoms efficiently, and the substrate bias accelerates the ionized metal atoms perpendicularly to the substrate surface. Experimental results show that the plasma density of the BDS is higher than that of the conventional DC magnetron plasma. The ionization rate of the sputtered metal atoms reaches more than 90% at 13Pa. Consequently, excellent step coverage is obtained for high aspect ratio (AR) holes by the BDS deposition.","subitem_description_type":"Abstract"}]},"item_4_publisher_30":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Faculty of Engineering, Mie University"}]},"item_4_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0385-6208","subitem_source_identifier_type":"PISSN"}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00816341","subitem_source_identifier_type":"NCID"}]},"item_4_text_18":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_text_language":"ja","subitem_text_value":"半導体デバイス用バイアス方向性スパッタリングの開発"}]},"item_4_text_65":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Departmental Bulletin Paper / 紀要論文"}]},"item_4_version_type_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"SATO, Hideki","creatorNameLang":"en"},{"creatorName":"佐藤, 英樹","creatorNameLang":"ja"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"MIZUNO, Shigeru","creatorNameLang":"en"},{"creatorName":"水野, 茂","creatorNameLang":"ja"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-18"}],"displaytype":"detail","filename":"AA008163410250004.PDF","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"AA008163410250004.PDF","url":"https://mie-u.repo.nii.ac.jp/record/5066/files/AA008163410250004.PDF"},"version_id":"145709aa-7116-47e3-ad0c-9d1c68cd01c1"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"High directionality","subitem_subject_scheme":"Other"},{"subitem_subject":"Ionized sputtering","subitem_subject_scheme":"Other"},{"subitem_subject":"Biased directional sputtering","subitem_subject_scheme":"Other"},{"subitem_subject":"RF magnetron plasma","subitem_subject_scheme":"Other"},{"subitem_subject":"Substrate bias","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Development of Biased Directional Sputtering(BDS) for Semiconductor Devices","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Development of Biased Directional Sputtering(BDS) for Semiconductor Devices","subitem_title_language":"en"}]},"item_type_id":"4","owner":"13","path":["393"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-07-02"},"publish_date":"2007-07-02","publish_status":"0","recid":"5066","relation_version_is_last":true,"title":["Development of Biased Directional Sputtering(BDS) for Semiconductor Devices"],"weko_creator_id":"13","weko_shared_id":-1},"updated":"2023-10-05T07:30:38.543065+00:00"}