@article{oai:mie-u.repo.nii.ac.jp:00008189,
 author = {白石, 賢二 and Shiraishi, Kenji and 小山, 紀久 and Oyama, Norihisa and 岡島, 康 and Okajima, Ko and 武田, 京三郎 and Takeda, Kyozaburo and 山口, 浩司 and Yamaguchi, Hiroshi and 伊藤, 智徳 and Ito, Tomonori and 太田, 英二 and Ohta, Eiji and 大野, 隆央 and Ohno, Takahisa},
 issue = {4},
 journal = {日本結晶成長学会誌},
 month = {Oct},
 note = {application/pdf, We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and the misfit-dislocations (MDs). This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs (110) obtained by this procedure is in good agreement with the experimentally obtained value.},
 pages = {250--256},
 title = {半導体格子不整合系におけるエピタキシャル成長の理論的研究 : マクロスコピックな成長過程とミクロスコピックな機構との関係 : 結晶成長の理論(<特集>21世紀を拓く薄膜結晶成長)},
 volume = {27},
 year = {2000}
}