{"created":"2023-06-19T11:39:56.880015+00:00","id":8189,"links":{},"metadata":{"_buckets":{"deposit":"70240ca5-a0a8-45ba-9548-33eaa7fe7e66"},"_deposit":{"created_by":15,"id":"8189","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"8189"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00008189","sets":["366:638:639"]},"author_link":["20461","20462","20463","20464","20465","20466","20467","20468"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-10-25","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"256","bibliographicPageStart":"250","bibliographicVolumeNumber":"27","bibliographic_titles":[{"bibliographic_title":"日本結晶成長学会誌"}]}]},"item_10001_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and the misfit-dislocations (MDs). This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs (110) obtained by this procedure is in good agreement with the experimentally obtained value.","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"日本結晶成長学会"}]},"item_10001_relation_42":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://ci.nii.ac.jp/naid/110002715437/"}]}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"日本結晶成長学会"},{"subitem_rights":"本文データは学協会の許諾に基づきCiNiiから複製したものである"}]},"item_10001_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00188386","subitem_source_identifier_type":"NCID"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0385-6275","subitem_source_identifier_type":"PISSN"}]},"item_10001_subject_21":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"540","subitem_subject_scheme":"NDC"}]},"item_10001_text_25":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_text_value":"Theoretical Studies of Epitaxial Growth on Semiconductor Lattice-Mismatched Systems Relation between Macroscopic Growth Behavior and Microscopic Mechanism : Theory of Crystal Growth(<Special Issue>Frontiers of Thin Film Crystal Growth for the New Millennium)"}]},"item_10001_text_70":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Journal Article / 学術雑誌論文"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"白石, 賢二","creatorNameLang":"ja"},{"creatorName":"Shiraishi, Kenji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小山, 紀久","creatorNameLang":"ja"},{"creatorName":"Oyama, Norihisa","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"岡島, 康","creatorNameLang":"ja"},{"creatorName":"Okajima, Ko","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"武田, 京三郎","creatorNameLang":"ja"},{"creatorName":"Takeda, Kyozaburo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"山口, 浩司","creatorNameLang":"ja"},{"creatorName":"Yamaguchi, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"伊藤, 智徳","creatorNameLang":"ja"},{"creatorName":"Ito, Tomonori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"太田, 英二","creatorNameLang":"ja"},{"creatorName":"Ohta, Eiji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大野, 隆央","creatorNameLang":"ja"},{"creatorName":"Ohno, Takahisa","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-18"}],"displaytype":"detail","filename":"40A6572.pdf","filesize":[{"value":"605.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40A6572.pdf","url":"https://mie-u.repo.nii.ac.jp/record/8189/files/40A6572.pdf"},"version_id":"56adb6bc-3fe1-4ab4-a54c-aa9cb01fb714"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"半導体格子不整合系におけるエピタキシャル成長の理論的研究 : マクロスコピックな成長過程とミクロスコピックな機構との関係 : 結晶成長の理論(<特集>21世紀を拓く薄膜結晶成長)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"半導体格子不整合系におけるエピタキシャル成長の理論的研究 : マクロスコピックな成長過程とミクロスコピックな機構との関係 : 結晶成長の理論(<特集>21世紀を拓く薄膜結晶成長)","subitem_title_language":"ja"}]},"item_type_id":"10001","owner":"15","path":["639"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-02-29"},"publish_date":"2008-02-29","publish_status":"0","recid":"8189","relation_version_is_last":true,"title":["半導体格子不整合系におけるエピタキシャル成長の理論的研究 : マクロスコピックな成長過程とミクロスコピックな機構との関係 : 結晶成長の理論(<特集>21世紀を拓く薄膜結晶成長)"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-10-13T01:32:54.799329+00:00"}