@article{oai:mie-u.repo.nii.ac.jp:00008190,
 author = {寒川, 義裕 and Kangawa, Yoshihiro and 伊藤, 智徳 and Ito, Tomonori and 田口, 明仁 and Taguchi, Akihito and 白石, 賢二 and Shiraish, Kenji and 平岡, 佳子 and Hiraoka, Yoshiko S and 入澤, 寿美 and Irisawa, Toshiharu and 大鉢, 忠 and Ohachi, Tadashi},
 issue = {1},
 journal = {日本結晶成長学会誌},
 month = {Apr},
 note = {application/pdf, A newly developed ab initio-based approach was applied for understanding adsorption-desorption behavior during molecular beam epitaxial growth of GaAs. The ab initiobased approach incorporates free energy of vapor phase; therefore we can calculate how adsorption and desorption depend on growth temperature and beam equivalent pressure (BEP). Versatility of the theoretical approach was confirmed by the calculation of Ga adsorption-desorption transition temperatures and transition BEPs on Ga-rich GaAs (001)-(4×2)β2 surface. Furthermore, in order to check the feasibility of the theoretical approach for prediction of adsorption-desorption behavior of As_2 molecules, the conditions where GaAs(001)-c (4×4) reconstructed structure is stable were investigated by the calculations of stability of As-dimers on the top surface under the various temperatures and BEPs. We also applied the theoretical approach to Ga diffusion length while staying on the GaAs (001)- (2×4)β2 and - (2×4)β1 surfaces and As pressure dependence of GaAs growth rate.},
 pages = {57--64},
 title = {GaAsエピタキシャル成長における吸着-脱離現象への理論的アプローチ(<小特集>結晶成長理論の最近の動向)},
 volume = {29},
 year = {2002}
}