{"created":"2023-06-19T11:39:56.922067+00:00","id":8190,"links":{},"metadata":{"_buckets":{"deposit":"7c108151-195a-47d6-9671-3529ed134cff"},"_deposit":{"created_by":15,"id":"8190","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"8190"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00008190","sets":["366:638:639"]},"author_link":["20477","20478","20479","20480","20481","20482","20483"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002-04-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"64","bibliographicPageStart":"57","bibliographicVolumeNumber":"29","bibliographic_titles":[{"bibliographic_title":"日本結晶成長学会誌"}]}]},"item_10001_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A newly developed ab initio-based approach was applied for understanding adsorption-desorption behavior during molecular beam epitaxial growth of GaAs. The ab initiobased approach incorporates free energy of vapor phase; therefore we can calculate how adsorption and desorption depend on growth temperature and beam equivalent pressure (BEP). Versatility of the theoretical approach was confirmed by the calculation of Ga adsorption-desorption transition temperatures and transition BEPs on Ga-rich GaAs (001)-(4×2)β2 surface. Furthermore, in order to check the feasibility of the theoretical approach for prediction of adsorption-desorption behavior of As_2 molecules, the conditions where GaAs(001)-c (4×4) reconstructed structure is stable were investigated by the calculations of stability of As-dimers on the top surface under the various temperatures and BEPs. We also applied the theoretical approach to Ga diffusion length while staying on the GaAs (001)- (2×4)β2 and - (2×4)β1 surfaces and As pressure dependence of GaAs growth rate.","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"日本結晶成長学会"}]},"item_10001_relation_42":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://ci.nii.ac.jp/naid/110002715523/"}]}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"日本結晶成長学会"},{"subitem_rights":"本文データは学協会の許諾に基づきCiNiiから複製したものである"}]},"item_10001_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00188386","subitem_source_identifier_type":"NCID"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0385-6275","subitem_source_identifier_type":"PISSN"}]},"item_10001_subject_21":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"450","subitem_subject_scheme":"NDC"}]},"item_10001_text_25":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_text_value":"Ab initio-based Approach to Adsorption-Desorption Behavior during GaAs Epitaxial Growth (<Special Issue>Recent Trend of Crystal Growth Theory)"}]},"item_10001_text_70":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Journal Article / 学術雑誌論文"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"寒川, 義裕","creatorNameLang":"ja"},{"creatorName":"Kangawa, Yoshihiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"伊藤, 智徳","creatorNameLang":"ja"},{"creatorName":"Ito, Tomonori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"田口, 明仁","creatorNameLang":"ja"},{"creatorName":"Taguchi, Akihito","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"白石, 賢二","creatorNameLang":"ja"},{"creatorName":"Shiraish, Kenji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"平岡, 佳子","creatorNameLang":"ja"},{"creatorName":"Hiraoka, Yoshiko S","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"入澤, 寿美","creatorNameLang":"ja"},{"creatorName":"Irisawa, Toshiharu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大鉢, 忠","creatorNameLang":"ja"},{"creatorName":"Ohachi, Tadashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-18"}],"displaytype":"detail","filename":"40A6573.pdf","filesize":[{"value":"697.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40A6573.pdf","url":"https://mie-u.repo.nii.ac.jp/record/8190/files/40A6573.pdf"},"version_id":"29b5ae2d-e54f-4c5f-97d3-071874e284da"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"GaAsエピタキシャル成長における吸着-脱離現象への理論的アプローチ(<小特集>結晶成長理論の最近の動向)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaAsエピタキシャル成長における吸着-脱離現象への理論的アプローチ(<小特集>結晶成長理論の最近の動向)","subitem_title_language":"ja"}]},"item_type_id":"10001","owner":"15","path":["639"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-03-03"},"publish_date":"2008-03-03","publish_status":"0","recid":"8190","relation_version_is_last":true,"title":["GaAsエピタキシャル成長における吸着-脱離現象への理論的アプローチ(<小特集>結晶成長理論の最近の動向)"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-10-13T01:32:57.248920+00:00"}