@article{oai:mie-u.repo.nii.ac.jp:00008191,
 author = {寒川, 義裕 and Kangawa, Yoshihiro and 伊藤, 智徳 and Ito, Tomonori and 熊谷, 義直 and Kumagai, Yoshinao and 纐纈, 明伯 and Koukitu, Akinori},
 issue = {2},
 journal = {日本結晶成長学会誌},
 month = {Jun},
 note = {application/pdf, Thermodynamic analyses were performed to understand the influence of lattice constraint from InN and GaN substrates on the relationship between input mole ratio R_<In> (=P_<In>^0/ (P_<In>^0 + P_<Ga>^0), where P^0_i is the input partial pressure of element i) and solid composition x in In_xGa_<1-x>N during molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). For the both growth methods, the calculation results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at higher temperatures while that for InGaN on InN can be seen at GaN-rich region due to the lattice constraint from the substrate. In case of the MOVPE, it is found that growth region of InGaN in the diagram related to V/III ratio and solid composition shrinks with increase of V/III ratio (increase of input partial pressure of NH_3). This is because the H_2 partial pressure produced by the decomposition of NH_3 increase at high V/III ratio (at high input partial pressure of NH_3).},
 pages = {104--110},
 title = {InGaN気相成長における気相-固相関係に対する基板拘束の影響(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)},
 volume = {30},
 year = {2003}
}