{"created":"2023-06-19T11:39:56.964136+00:00","id":8191,"links":{},"metadata":{"_buckets":{"deposit":"52c6912f-3606-448d-a2cd-65246dba32dd"},"_deposit":{"created_by":15,"id":"8191","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"8191"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00008191","sets":["366:638:639"]},"author_link":["20491","20492","20493","20494"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-06-25","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"110","bibliographicPageStart":"104","bibliographicVolumeNumber":"30","bibliographic_titles":[{"bibliographic_title":"日本結晶成長学会誌"}]}]},"item_10001_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Thermodynamic analyses were performed to understand the influence of lattice constraint from InN and GaN substrates on the relationship between input mole ratio R_<In> (=P_<In>^0/ (P_<In>^0 + P_<Ga>^0), where P^0_i is the input partial pressure of element i) and solid composition x in In_xGa_<1-x>N during molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). For the both growth methods, the calculation results suggest that a compositionally unstable region is found at the InN-rich region for InGaN on GaN at higher temperatures while that for InGaN on InN can be seen at GaN-rich region due to the lattice constraint from the substrate. In case of the MOVPE, it is found that growth region of InGaN in the diagram related to V/III ratio and solid composition shrinks with increase of V/III ratio (increase of input partial pressure of NH_3). This is because the H_2 partial pressure produced by the decomposition of NH_3 increase at high V/III ratio (at high input partial pressure of NH_3).","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"日本結晶成長学会"}]},"item_10001_relation_42":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://ci.nii.ac.jp/naid/110002715831/"}]}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"日本結晶成長学会"},{"subitem_rights":"本文データは学協会の許諾に基づきCiNiiから複製したものである"}]},"item_10001_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00188386","subitem_source_identifier_type":"NCID"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0385-6275","subitem_source_identifier_type":"PISSN"}]},"item_10001_subject_21":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"540","subitem_subject_scheme":"NDC"}]},"item_10001_text_25":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_text_value":"Influence of Lattice Constraint from Substrate on Relationship between Input Mole Ratio and Solid Composition of InGaN during MBE and MOVPE(<Special issue>The Role of the Substrate in Determining the Properties of Epitaxial Group III Nitrides)"}]},"item_10001_text_70":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Journal Article / 学術雑誌論文"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"寒川, 義裕","creatorNameLang":"ja"},{"creatorName":"Kangawa, Yoshihiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"伊藤, 智徳","creatorNameLang":"ja"},{"creatorName":"Ito, Tomonori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"熊谷, 義直","creatorNameLang":"ja"},{"creatorName":"Kumagai, Yoshinao","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"纐纈, 明伯","creatorNameLang":"ja"},{"creatorName":"Koukitu, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-18"}],"displaytype":"detail","filename":"40A6575.pdf","filesize":[{"value":"643.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40A6575.pdf","url":"https://mie-u.repo.nii.ac.jp/record/8191/files/40A6575.pdf"},"version_id":"30f891c8-9110-46e7-88fd-bc6ca1d06ad3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"InGaN気相成長における気相-固相関係に対する基板拘束の影響(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"InGaN気相成長における気相-固相関係に対する基板拘束の影響(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)","subitem_title_language":"ja"}]},"item_type_id":"10001","owner":"15","path":["639"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-03-03"},"publish_date":"2008-03-03","publish_status":"0","recid":"8191","relation_version_is_last":true,"title":["InGaN気相成長における気相-固相関係に対する基板拘束の影響(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-10-13T01:33:00.453056+00:00"}