{"created":"2023-06-19T11:40:05.828876+00:00","id":8398,"links":{},"metadata":{"_buckets":{"deposit":"5bd74fd8-b9c1-48b0-a774-658ff865fe8f"},"_deposit":{"created_by":15,"id":"8398","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"8398"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00008398","sets":["366:638:639"]},"author_link":["21629","21630","21631","21632"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-11-30","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"1167","bibliographicPageStart":"1164","bibliographicVolumeNumber":"256","bibliographic_titles":[{"bibliographic_title":"Applied surface science : a journal devoted to the properties of interfaces in relation to the synthesis and behaviour of materials"}]}]},"item_10001_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The adsorption–desorption behavior of Si adatoms on GaAs(1 1 1)A–(2 × 2) surfaces is investigated using our ab initio-based approach, in which adsorption and desorption behavior of Si adatoms is described by comparing the calculated desorption energy obtained by total-energy electronic-structure calculations with the chemical potential estimated by quantum statistical mechanics. We find that the Si adsorption at the Ga-vacancy site on the (2 × 2) surfaces with As adatoms occurs less than 1140–1590 K while the adsorption without As adatom does less than 630–900 K. The change in adsorption temperature of Si adatoms by As adatoms is due to self-surfactant effects of As adatoms: the promotion of the Si adsorption triggered by As adatoms is found to be interpreted in terms of the band-energy stabilization. Furthermore, the stable temperature range for Si adsorbed surfaces with As adatoms agrees with the experimental results. The obtained results provide a firm theoretical framework to clarify n-type doping processes during GaAs epitaxial growth.","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"North-Holland"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.apsusc.2009.01.101","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_42":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://dx.doi.org/10.1016/j.apsusc.2009.01.101"}]}]},"item_10001_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA10503400","subitem_source_identifier_type":"NCID"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0169-4332","subitem_source_identifier_type":"PISSN"}]},"item_10001_text_68":{"attribute_name":"ノート","attribute_value_mlt":[{"subitem_text_value":"出版者版電子ジャーナルあり"}]},"item_10001_text_70":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Journal Article / 学術雑誌論文"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Tatematsu, Hiroaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"21629","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akiyama, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"21630","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakamura, Kohji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"21631","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ito, Tomonori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"21632","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-18"}],"displaytype":"detail","filename":"40A13346.pdf","filesize":[{"value":"216.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40A13346.pdf","url":"https://mie-u.repo.nii.ac.jp/record/8398/files/40A13346.pdf"},"version_id":"2f8332f7-a0cf-4610-8d86-f9274b68b9c7"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"GaAs(1 1 1)A","subitem_subject_scheme":"Other"},{"subitem_subject":"Si doping","subitem_subject_scheme":"Other"},{"subitem_subject":"As adatom","subitem_subject_scheme":"Other"},{"subitem_subject":"Self-surfactant effect","subitem_subject_scheme":"Other"},{"subitem_subject":"Electron counting","subitem_subject_scheme":"Other"},{"subitem_subject":"Surface phase diagram","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"An ab initio-based approach to adsorption-desorption behavior of Si adatoms on GaAs(1 1 1)A-(2 × 2) surfaces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"An ab initio-based approach to adsorption-desorption behavior of Si adatoms on GaAs(1 1 1)A-(2 × 2) surfaces","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"15","path":["639"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2010-07-01"},"publish_date":"2010-07-01","publish_status":"0","recid":"8398","relation_version_is_last":true,"title":["An ab initio-based approach to adsorption-desorption behavior of Si adatoms on GaAs(1 1 1)A-(2 × 2) surfaces"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-10-16T02:50:14.977142+00:00"}