{"created":"2023-06-19T11:40:05.964438+00:00","id":8401,"links":{},"metadata":{"_buckets":{"deposit":"e3d49c3d-d080-4bd7-876a-886978abd878"},"_deposit":{"created_by":15,"id":"8401","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"8401"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00008401","sets":["366:638:639"]},"author_link":["21642","21643","21644","21645"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-01-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"174","bibliographicPageStart":"171","bibliographicVolumeNumber":"604","bibliographic_titles":[{"bibliographic_title":"Surface science"}]}]},"item_10001_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The adsorption processes of an Si atom on GaAs(1 1 1)A surfaces under growth conditions are investigated on the basis of first-principles surface phase diagrams, in which adsorption–desorption behavior is described by comparing the calculated adsorption energy obtained by total-energy electronic-structure calculations with vapor-phase chemical potential estimated by quantum statistical mechanics. The calculated surface phase diagram as functions of temperature and As2 pressure demonstrates that both Ga and As atoms are adsorbed on the Ga-vacancy site of GaAs(1 1 1)A-(2×2) surface under low As-pressure conditions, resulting in the formation of (2×2) surface with an As adatom. The surface phase diagrams as functions of temperature and Si pressure also reveal that an Si atom can be adsorbed on the (2×2) surface with an As adatom for temperatures less than ∼1160 K and this Si atom can occupy one of As-lattice sites after the incorporation of another As atom, leading to p-type conductivity. In contrast, the (2×2) surface with an As trimer is found to be stabilized under high As-pressure conditions. The surface phase diagram for Si incorporation clarify that an Si atom can be adsorbed at one of Ga-lattice sites of the (2×2) surface with an As trimer for temperatures less than ∼870 K. These calculated results provide one of possible explanations for the formation of p-type and n-type GaAs on GaAs(1 1 1)A  surfaces under low and high As-pressure conditions, respectively.","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"North-Holland"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.susc.2009.11.002","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_42":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://dx.doi.org/10.1016/j.susc.2009.11.002"}]}]},"item_10001_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00853803","subitem_source_identifier_type":"NCID"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0039-6028","subitem_source_identifier_type":"PISSN"}]},"item_10001_text_68":{"attribute_name":"ノート","attribute_value_mlt":[{"subitem_text_value":"出版者版電子ジャーナルあり"}]},"item_10001_text_70":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Journal Article / 学術雑誌論文"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Akiyama, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tatematsu, Hiroaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakamura, Kohji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ito, Tomonori","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-18"}],"displaytype":"detail","filename":"40A13364.pdf","filesize":[{"value":"310.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40A13364.pdf","url":"https://mie-u.repo.nii.ac.jp/record/8401/files/40A13364.pdf"},"version_id":"515206ab-80dc-484d-a2f6-645635eff181"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"GaAs(1 1 1)A surface","subitem_subject_scheme":"Other"},{"subitem_subject":"Si doping","subitem_subject_scheme":"Other"},{"subitem_subject":"Surface phase diagrams","subitem_subject_scheme":"Other"},{"subitem_subject":"Electron counting rule","subitem_subject_scheme":"Other"},{"subitem_subject":"Density functional calculations","subitem_subject_scheme":"Other"},{"subitem_subject":"Adsorption kinetics","subitem_subject_scheme":"Other"},{"subitem_subject":"Growth","subitem_subject_scheme":"Other"},{"subitem_subject":"Gallium arsenide","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"A first-principles surface phase diagram study for Si-adsorption processes on GaAs(1 1 1)A surfaces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"A first-principles surface phase diagram study for Si-adsorption processes on GaAs(1 1 1)A surfaces","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"15","path":["639"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2010-07-01"},"publish_date":"2010-07-01","publish_status":"0","recid":"8401","relation_version_is_last":true,"title":["A first-principles surface phase diagram study for Si-adsorption processes on GaAs(1 1 1)A surfaces"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-10-16T02:50:27.857996+00:00"}