{"created":"2023-06-19T11:40:06.008651+00:00","id":8402,"links":{},"metadata":{"_buckets":{"deposit":"7ac1f373-25ea-4ad0-bf97-3578cddda950"},"_deposit":{"created_by":15,"id":"8402","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"8402"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00008402","sets":["366:638:639"]},"author_link":["21646","21647","21648","21649"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-11-30","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"1221","bibliographicPageStart":"1218","bibliographicVolumeNumber":"256","bibliographic_titles":[{"bibliographic_title":"Applied surface science : a journal devoted to the properties of interfaces in relation to the synthesis and behaviour of materials"}]}]},"item_10001_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The atomic arrangements in zinc blende structured GaNxAs1−x  thin films coherently grown on V-grooved substrates are theoretically investigated using empirical interatomic potentials and Monte Carlo simulation. The resultant atomic arrangements in GaNxAs1−x  strongly depend on concentration x and substrate lattice parameter asub. Surface segregation of As or N is mainly found in GaNxAs1−x with large lattice mismatch to the substrate. On the other hand, the novel atomic arrangements such as layered segregation or ordered structure are found in GaNxAs1−x at the specific region such as (x, asub) = (0.5, 5.3), (0.3, 5.3), and (0.3, 5.1). This specific region corresponds to that with negative excess energy and with sufficient N and As atoms remaining in thin film layers even after their surface segregation. The formation of the novel atomic arrangements is discussed in terms of bond lengths in the surface layers. These results suggest that various novel atomic arrangements in alloy semiconductor thin films appear depending on x and asub  which control degree of lattice constraint.","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"North-Holland"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.apsusc.2009.05.067","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_42":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://dx.doi.org/10.1016/j.apsusc.2009.05.067"}]}]},"item_10001_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA10503400","subitem_source_identifier_type":"NCID"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0169-4332","subitem_source_identifier_type":"PISSN"}]},"item_10001_text_68":{"attribute_name":"ノート","attribute_value_mlt":[{"subitem_text_value":"出版者版電子ジャーナルあり"}]},"item_10001_text_70":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Journal Article / 学術雑誌論文"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ito, Tomonori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takasu, Naoki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Akiyama, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakamura, Kohji","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-18"}],"displaytype":"detail","filename":"40A13347.pdf","filesize":[{"value":"3.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40A13347.pdf","url":"https://mie-u.repo.nii.ac.jp/record/8402/files/40A13347.pdf"},"version_id":"0a218f0f-a988-4160-a078-06f86facaca9"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"GaNxAs1−x thin films","subitem_subject_scheme":"Other"},{"subitem_subject":"V-grooved substrate","subitem_subject_scheme":"Other"},{"subitem_subject":"Lattice constraint","subitem_subject_scheme":"Other"},{"subitem_subject":"Layered segregation","subitem_subject_scheme":"Other"},{"subitem_subject":"Surface segregation","subitem_subject_scheme":"Other"},{"subitem_subject":"Empirical interatomic potential","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"15","path":["639"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2010-07-01"},"publish_date":"2010-07-01","publish_status":"0","recid":"8402","relation_version_is_last":true,"title":["Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-10-16T02:50:27.950915+00:00"}