{"created":"2023-06-19T11:40:06.052451+00:00","id":8403,"links":{},"metadata":{"_buckets":{"deposit":"3d4c1089-adc0-43e5-8471-3c4c3d6aab0d"},"_deposit":{"created_by":15,"id":"8403","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"8403"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00008403","sets":["366:638:639"]},"author_link":["21650","21651","21652"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-05-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageEnd":"3096","bibliographicPageStart":"3093","bibliographicVolumeNumber":"311","bibliographic_titles":[{"bibliographic_title":"Journal of crystal growth"}]}]},"item_10001_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Structural stability of GaN(0 0 0 1) under Ga-rich conditions is systematically investigated by using our ab initio-based approach. The surface phase diagram for GaN(0 0 0 1) including (2×2) and pseudo-(1×1) is obtained as functions of temperature and Ga beam equivalent pressure by comparing chemical potentials of Ga atom in the gas phase with that on the surface. The calculated results reveal that the pseudo-(1×1) appearing below 684–973 K changes its structure to the (2×2) with Ga adatom at higher temperatures beyond 767–1078 K via the newly found (1×1) with two adlayers of Ga. These results are consistent with the stable temperature range of both the pseudo-(1×1) and (2×2) with Ga adatom obtained experimentally. Furthermore, it should be noted that the structure with another coverage of Ga adatoms between the (1×1) and (2×2)-Ga does not appear as a stable structure of GaN(0 0 0 1). Furthermore, ghost island formation observed by scanning tunneling microscopy is discussed on the basis of the phase diagram.","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"North-Holland"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.jcrysgro.2009.01.099","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_42":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://dx.doi.org/10.1016/j.jcrysgro.2009.01.099"}]}]},"item_10001_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00696341","subitem_source_identifier_type":"NCID"}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0022-0248","subitem_source_identifier_type":"PISSN"}]},"item_10001_text_68":{"attribute_name":"ノート","attribute_value_mlt":[{"subitem_text_value":"出版者版電子ジヤーナルあり"}]},"item_10001_text_70":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Journal Article / 学術雑誌論文"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ito, Tomonori","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Akiyama, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakamura, Kohji","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-02-18"}],"displaytype":"detail","filename":"40A13357.pdf","filesize":[{"value":"584.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40A13357.pdf","url":"https://mie-u.repo.nii.ac.jp/record/8403/files/40A13357.pdf"},"version_id":"0273bae0-8fc4-4f13-bed0-b768f0a73a99"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"A1. Phase diagrams","subitem_subject_scheme":"Other"},{"subitem_subject":"A1. Surface structure","subitem_subject_scheme":"Other"},{"subitem_subject":"A3. Molecular beam epitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"B1. Nitrides","subitem_subject_scheme":"Other"},{"subitem_subject":"B2. Semiconducting gallium compounds","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"An ab initio-based approach to the stability of GaN(0 0 0 1) surfaces under Ga-rich conditions","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"An ab initio-based approach to the stability of GaN(0 0 0 1) surfaces under Ga-rich conditions","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"15","path":["639"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2010-07-01"},"publish_date":"2010-07-01","publish_status":"0","recid":"8403","relation_version_is_last":true,"title":["An ab initio-based approach to the stability of GaN(0 0 0 1) surfaces under Ga-rich conditions"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-10-16T02:50:33.682649+00:00"}