{"created":"2023-06-19T11:40:07.574513+00:00","id":8438,"links":{},"metadata":{"_buckets":{"deposit":"0ad01a09-ade7-4205-9f04-967c414136a4"},"_deposit":{"created_by":15,"id":"8438","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"8438"},"status":"published"},"_oai":{"id":"oai:mie-u.repo.nii.ac.jp:00008438","sets":["366:638:639"]},"author_link":["27748","27749","27750","27751","27752"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-07-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"7","bibliographicPageStart":"1","bibliographicVolumeNumber":"112","bibliographic_titles":[{"bibliographic_title":"Applied Physics A : Materials Science and Processing"}]}]},"item_10001_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Amorphous silicon nanowires (NWs), 3-50 nm thick and up to 4 mu m long, were grown by room-temperature continuous wave laser ablation of Si in high-pressure (0.1-0.9 MPa) Ar gas without the addition of any catalysts. The diameter and length of the NWs increased as the pressures of the ambient Ar increased. Sphere-like Si particles with diameters of 4-110 nm were observed at the tips of grown NWs and their diameters exhibited a strong correlation with the NW diameters. We propose a stress-driven self-catalytic vapor-liquid-solid mechanism to explain the growth of the NWs.","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Springer Verlag"}]},"item_10001_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1007/s00339-012-7169-y","subitem_relation_type_select":"DOI"}}]},"item_10001_relation_42":{"attribute_name":"関係URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://link.springer.com/article/10.1007%2Fs00339-012-7169-y"}]}]},"item_10001_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0947-8396","subitem_source_identifier_type":"PISSN"}]},"item_10001_text_70":{"attribute_name":"資源タイプ（三重大）","attribute_value_mlt":[{"subitem_text_value":"Journal Article / 学術雑誌論文"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kokai, F.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"27748","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Inoue, S.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"27749","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hidaka, H.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"27750","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Uchiyama, K.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"27751","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"27752","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Koshio, A.","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-03-13"}],"displaytype":"detail","filename":"40A17015.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"40A17015.pdf","url":"https://mie-u.repo.nii.ac.jp/record/8438/files/40A17015.pdf"},"version_id":"1e42751c-27df-432d-b8b8-41750799ac90"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Catalyst-Free Growth of Amorphous Silicon Nanowires by Laser Ablation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Catalyst-Free Growth of Amorphous Silicon Nanowires by Laser Ablation","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"15","path":["639"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2014-09-02"},"publish_date":"2014-09-02","publish_status":"0","recid":"8438","relation_version_is_last":true,"title":["Catalyst-Free Growth of Amorphous Silicon Nanowires by Laser Ablation"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-10-16T04:30:22.724744+00:00"}