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InGaNの非混和性に対する基板拘束の寄与 : 成長界面III
http://hdl.handle.net/10076/8495
http://hdl.handle.net/10076/84950ac35a16-d5d9-49b8-a5e4-c3207b7f24fc
名前 / ファイル | ライセンス | アクション |
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40G6569.pdf (108.4 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2008-02-29 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | InGaNの非混和性に対する基板拘束の寄与 : 成長界面III | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
寒川, 義裕
× 寒川, 義裕× 伊藤, 智徳× 森, 篤史× 纐纐, 明伯 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We carried out excess energy calculations for bulk InGaN, InGaN/GaN and lnGaN/InN in order to investigate the contribution of lattice constraint from the bottom layer to the compositional instability of InGaN. In the epi-layers, asynmetric nature of the excess energy curves as a function of composition is emphasized compared with that for bulk The results suggest that incorporating the contribution of the lattice constraint is indipensable to predict the compositional instability for InGaN grown on substrates. | |||||
書誌情報 |
日本結晶成長学会誌 巻 27, 号 1, p. 152, 発行日 2000-07-01 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0385-6275 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00188386 | |||||
権利 | ||||||
権利情報 | 日本結晶成長学会 | |||||
権利 | ||||||
権利情報 | 本文データは学協会の許諾に基づきCiNiiから複製したものである | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 530 | |||||
その他のタイトル | ||||||
en | ||||||
Contribution of Lattice Constraint to Compositional Instability of InGaN | ||||||
出版者 | ||||||
出版者 | 日本結晶成長学会 | |||||
関係URI | ||||||
関連名称 | http://ci.nii.ac.jp/naid/110002715369/ | |||||
資源タイプ(三重大) | ||||||
Conference Paper / 会議発表論文 |