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Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films
http://hdl.handle.net/10076/11210
http://hdl.handle.net/10076/1121005443592-b6e9-4655-a0d3-41ef86dd99a9
名前 / ファイル | ライセンス | アクション |
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40A13347.pdf (3.6 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2010-07-01 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | GaNxAs1−x thin films | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | V-grooved substrate | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Lattice constraint | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Layered segregation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Surface segregation | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Empirical interatomic potential | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Ito, Tomonori
× Ito, Tomonori× Takasu, Naoki× Akiyama, Toru× Nakamura, Kohji |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The atomic arrangements in zinc blende structured GaNxAs1−x thin films coherently grown on V-grooved substrates are theoretically investigated using empirical interatomic potentials and Monte Carlo simulation. The resultant atomic arrangements in GaNxAs1−x strongly depend on concentration x and substrate lattice parameter asub. Surface segregation of As or N is mainly found in GaNxAs1−x with large lattice mismatch to the substrate. On the other hand, the novel atomic arrangements such as layered segregation or ordered structure are found in GaNxAs1−x at the specific region such as (x, asub) = (0.5, 5.3), (0.3, 5.3), and (0.3, 5.1). This specific region corresponds to that with negative excess energy and with sufficient N and As atoms remaining in thin film layers even after their surface segregation. The formation of the novel atomic arrangements is discussed in terms of bond lengths in the surface layers. These results suggest that various novel atomic arrangements in alloy semiconductor thin films appear depending on x and asub which control degree of lattice constraint. | |||||
書誌情報 |
Applied surface science : a journal devoted to the properties of interfaces in relation to the synthesis and behaviour of materials 巻 256, 号 4, p. 1218-1221, 発行日 2009-11-30 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0169-4332 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10503400 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.apsusc.2009.05.067 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
出版者 | North-Holland | |||||
関係URI | ||||||
関連名称 | http://dx.doi.org/10.1016/j.apsusc.2009.05.067 | |||||
ノート | ||||||
出版者版電子ジャーナルあり | ||||||
資源タイプ(三重大) | ||||||
Journal Article / 学術雑誌論文 |