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An ab initio-based approach to the stability of GaN(0 0 0 1) surfaces under Ga-rich conditions
http://hdl.handle.net/10076/11211
http://hdl.handle.net/10076/112114a9804d7-a3a1-4d95-86a3-fb01e4dd9d15
名前 / ファイル | ライセンス | アクション |
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40A13357.pdf (584.7 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2010-07-01 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | An ab initio-based approach to the stability of GaN(0 0 0 1) surfaces under Ga-rich conditions | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | A1. Phase diagrams | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | A1. Surface structure | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | A3. Molecular beam epitaxy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | B1. Nitrides | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | B2. Semiconducting gallium compounds | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Ito, Tomonori
× Ito, Tomonori× Akiyama, Toru× Nakamura, Kohji |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Structural stability of GaN(0 0 0 1) under Ga-rich conditions is systematically investigated by using our ab initio-based approach. The surface phase diagram for GaN(0 0 0 1) including (2×2) and pseudo-(1×1) is obtained as functions of temperature and Ga beam equivalent pressure by comparing chemical potentials of Ga atom in the gas phase with that on the surface. The calculated results reveal that the pseudo-(1×1) appearing below 684–973 K changes its structure to the (2×2) with Ga adatom at higher temperatures beyond 767–1078 K via the newly found (1×1) with two adlayers of Ga. These results are consistent with the stable temperature range of both the pseudo-(1×1) and (2×2) with Ga adatom obtained experimentally. Furthermore, it should be noted that the structure with another coverage of Ga adatoms between the (1×1) and (2×2)-Ga does not appear as a stable structure of GaN(0 0 0 1). Furthermore, ghost island formation observed by scanning tunneling microscopy is discussed on the basis of the phase diagram. | |||||
書誌情報 |
Journal of crystal growth 巻 311, 号 10, p. 3093-3096, 発行日 2009-05-01 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0022-0248 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00696341 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.jcrysgro.2009.01.099 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
出版者 | North-Holland | |||||
関係URI | ||||||
関連名称 | http://dx.doi.org/10.1016/j.jcrysgro.2009.01.099 | |||||
ノート | ||||||
出版者版電子ジヤーナルあり | ||||||
資源タイプ(三重大) | ||||||
Journal Article / 学術雑誌論文 |