Item type |
紀要論文 / Departmental Bulletin Paper(1) |
公開日 |
2007-07-02 |
タイトル |
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タイトル |
Calculations of Energy Shift of the Conduction Band-Edge in Doped and Compensated GaP |
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言語 |
en |
言語 |
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言語 |
eng |
キーワード |
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主題Scheme |
Other |
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主題 |
calculation |
キーワード |
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主題Scheme |
Other |
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主題 |
parabolic energy-shift |
キーワード |
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主題Scheme |
Other |
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主題 |
exchange interaction |
キーワード |
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主題Scheme |
Other |
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主題 |
Coulomb interaction |
キーワード |
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主題Scheme |
Other |
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主題 |
donor doping |
キーワード |
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主題Scheme |
Other |
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主題 |
compensation |
キーワード |
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主題Scheme |
Other |
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主題 |
GaP |
資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
departmental bulletin paper |
著者 |
遠藤, 民生
伊藤, 伸彦
沖野, 祥
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抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
The energy shifts of the parabolic conduction band-edge at 77 and 300K with doping the Te-donor in GaP were calculated in the nondegenerate system for the two cases ; unintentional and intentional compensations, using the two models proposed by Hwang abd by Mahan. The total parabolic shift <special>△EM(△EH)</special>, and the contributions of the exchangeinteraction <special>△μex(△Ee)</special> and of the Coulomb interaction <special>△μed(△Ec)</special> calculated by the Mahan's model (Hwang's model), increase with increasing donor concentration in the unintentional compensation system at 300K. <special>△μex</special> is smaller than <special>△μed</special> whereas <special>△Ee</special> is much larger than <special>△Ec</special>, and <special>△μex < △Ee</special> and <special>△μed > △Ec</special>. <special>△EM</special> agrees well the experimental parabolic shift △δ while <special>△EH > △δ</special>. The energy gap narrowing <special>△EG</special> calculated by the Mahan's model is much larger than the experimental energy gap narrowing <special>△EC</special>. The results are interppretd as follows. <special>△μex</special> fairly estimate the exchange interaction since the Mahan's model takes account of the anisotropy and multivalley effects. <special>△μed</special> reasonably estimates the Coulomb interaction since the Mahan's model takes account of the self-consistent interaction energy of the elentron-screened donor system. The overestimation of the hole-electron correlathon energy may be a reason for <special>△EG > △EO</special>. |
書誌情報 |
Research reports of the Faculty of Engineering, Mie University
巻 14,
p. 39-56,
発行日 1989-12-20
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ISSN |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0385-6208 |
書誌レコードID |
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収録物識別子タイプ |
NCID |
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収録物識別子 |
AA00816341 |
フォーマット |
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内容記述タイプ |
Other |
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内容記述 |
application/pdf |
著者版フラグ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
その他のタイトル |
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言語 |
ja |
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値 |
不純物添加・補償GaP結晶半導体における伝導帯端のエネルギーシフトの計算 |
出版者 |
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出版者 |
Faculty of Engineering, Mie University |
資源タイプ(三重大) |
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値 |
Departmental Bulletin Paper / 紀要論文 |