| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2008-03-11 |
| タイトル |
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|
タイトル |
有機金属気相法で作製したInGaN厚膜の成長過程のTEM観察 : 組成不均一の発生(<小特集>III族窒化物半導体の結晶成長はどこまで進んだか) |
|
言語 |
ja |
| 言語 |
|
|
言語 |
jpn |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
桑野, 範之
滝, 海
沖, 憲典
川口, 靖利
平松, 和政
澤木, 宣彦
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
Transmission electron microscope (TEM) analysis has been carried out for the growth process in thick InGaN layers prepared by metalorganic vapor phase epitaxy. In the case of growth on GaN/LT-AlN/α-Al_2O_3 (0001) , a thin InGaN Layer of a good quality can grow with a smooth interface of InGaN/GaN and a smooth (0001) exterior surface. Threading dislocations in GaN penetrate into the InGaN layer and have a pit on each end on the exterior surface of InGaN. By development of the pits, the InGaN layer becomes to have a shape of pyramids with {11^^-01} facet planes. Thereafter, InGaN with a columnar structure is deposited on the pyramids. A two-layer-structure is thus made in the thick layer. Energy-dispersive x-ray spectroscopy (EDX) analysis has confirmed that the lower layer has a lower In content than in the upper one which has the equilibrium composition In_<0.2>Ga_<0.8>N. The lower In content is attributed to the lattice coherence with GaN, or "composition pulling effect". Small grains of InN have been recognized on the surface of the upper layer of InGaN. The grains keep a good lattice coherency with the InGaN layer. On LT-AlN/α-Al_2O_3 (0001) , InGaN with the equlibrium composition grows in a columnar structure. Inside the InGaN layer, domains of a lower In content have been recognized. The domains have a crystal orientation relationship with the matrix of InGaN. These results suggest that the lattice coherency has a strong effect on the formation of inhomogenous regions in InGaN alloys. |
| 書誌情報 |
日本結晶成長学会誌
巻 25,
号 2,
p. 106-112,
発行日 1998-06-30
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| ISSN |
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収録物識別子タイプ |
PISSN |
|
収録物識別子 |
0385-6275 |
| 書誌レコードID |
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収録物識別子タイプ |
NCID |
|
収録物識別子 |
AN00188386 |
| 権利 |
|
|
権利情報 |
日本結晶成長学会 |
| 権利 |
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|
権利情報 |
本文データは学協会の許諾に基づきCiNiiから複製したものである |
| フォーマット |
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|
内容記述タイプ |
Other |
|
内容記述 |
application/pdf |
| 著者版フラグ |
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|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
| 日本十進分類法 |
|
|
主題Scheme |
NDC |
|
主題 |
540 |
| その他のタイトル |
|
|
値 |
Observation of Growth Process of InGaN Thick Layers Grown by Metalorganic Vapor Phase Epitaxy : Formation of Compositional Inhomogenuity(<Special Issue>Crystal Growth of III-Group Nitride-Semiconductors) |
| 出版者 |
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|
出版者 |
日本結晶成長学会 |
| 関係URI |
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関連名称 |
http://ci.nii.ac.jp/naid/110002715024/ |
| 資源タイプ（三重大） |
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|
値 |
Journal Article / 学術雑誌論文 |
40A6693.pdf (901.6 kB)
