Thermodynamic analyses were carried out to understand compositional instability of InGaN/GaN and InGaN/InN in the MBE growth. In the thermodynamic analysis, contribution of lattice constraint from bottom layer was incorporated using enthalpy of mixing of InGaN/GaN and InGaN/InN, ΔH_m^<InGaN/GaN> and ΔH_m^<InGaN/InN>, which can be obtained by empirical interatomic potential calculations. The results suggest that compositional unstable region for InGaN/InN shifted toward Ga-rich side compared with that for InGaN/GaN. This implies that homogeneous InGaN thin films with large indium mole fraction is possible to form on InN substrate.
雑誌名
日本結晶成長学会誌
巻
29
号
2
ページ
84
発行年
2002-07-01
ISSN
0385-6275
書誌レコードID
AN00188386
権利
日本結晶成長学会
本文データは学協会の許諾に基づきCiNiiから複製したものである
フォーマット
application/pdf
著者版フラグ
publisher
日本十進分類法
450
その他のタイトル
Thermodynamic study for relation between solid composition and input ratio of InGaN on GaN and InN
InGaN/GaNおよびInGaN/InN気相成長における気相-固相関係 : 結晶成長理論シンポジウム
40G6574.pdf
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