We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and the misfit-dislocations (MDs). This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs (110) obtained by this procedure is in good agreement with the experimentally obtained value.
雑誌名
日本結晶成長学会誌
巻
27
号
4
ページ
250 - 256
発行年
2000-10-25
ISSN
0385-6275
書誌レコードID
AN00188386
権利
日本結晶成長学会
本文データは学協会の許諾に基づきCiNiiから複製したものである
フォーマット
application/pdf
著者版フラグ
publisher
日本十進分類法
540
その他のタイトル
Theoretical Studies of Epitaxial Growth on Semiconductor Lattice-Mismatched Systems Relation between Macroscopic Growth Behavior and Microscopic Mechanism : Theory of Crystal Growth(<Special Issue>Frontiers of Thin Film Crystal Growth for the New Millennium)
半導体格子不整合系におけるエピタキシャル成長の理論的研究 : マクロスコピックな成長過程とミクロスコピックな機構との関係 : 結晶成長の理論(<特集>21世紀を拓く薄膜結晶成長)
40A6572.pdf
(605.09KB)
