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半導体格子不整合系でのエピタキシー成長とミスフィット転位 : 成長界面III
http://hdl.handle.net/10076/8497
http://hdl.handle.net/10076/8497191d3d0e-06ae-48c4-a842-98c91cb79fba
名前 / ファイル | ライセンス | アクション |
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40G6571.pdf (71.2 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2008-02-29 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | 半導体格子不整合系でのエピタキシー成長とミスフィット転位 : 成長界面III | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
宮城島, 規
× 宮城島, 規× 岡島, 康× 武田, 京三郎× 小山, 紀久× 大野, 隆央× 白石, 賢二× 伊藤, 智徳 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Combining the two approaches of the phenomenological theory and the atomistic analysis, we clarified the characteristics of the hetero-epitaxial growth, focusing on the misfit dislocation generated at the semiconductor interfaces. We apply these theories to GaSb/GaAs(001) system. In the atomistic analysis we found a 5&7 membered ring structure at the dislocation core by using first-principles calculations. | |||||
書誌情報 |
日本結晶成長学会誌 巻 27, 号 1, p. 149, 発行日 2000-07-01 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0385-6275 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00188386 | |||||
権利 | ||||||
権利情報 | 日本結晶成長学会 | |||||
権利 | ||||||
権利情報 | 本文データは学協会の許諾に基づきCiNiiから複製したものである | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 540 | |||||
その他のタイトル | ||||||
en | ||||||
Theoretical Study On the Epitaxial Growth and Misfit-Dislocations | ||||||
出版者 | ||||||
出版者 | 日本結晶成長学会 | |||||
関係URI | ||||||
関連名称 | http://ci.nii.ac.jp/naid/110002715366/ | |||||
資源タイプ(三重大) | ||||||
Conference Paper / 会議発表論文 |