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THM Growth of Ternary and Multinary Chalcopyrite Semiconductors
http://hdl.handle.net/10076/4079
http://hdl.handle.net/10076/4079f9846931-81d6-4895-bc55-dc921ebe5732
名前 / ファイル | ライセンス | アクション |
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AA008163410240006.PDF (2.3 MB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2007-07-02 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | THM Growth of Ternary and Multinary Chalcopyrite Semiconductors | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Chalcopyrite semiconductors | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | I-III-VI₂ compounds | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Single crystal growth | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Traveling heater method (THM) | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Solution growth | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Copper indium diselenide | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
著者 |
三宅, 秀人
× 三宅, 秀人× 杉山, 耕一× 平松, 和政 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The traveling heater method (THM), which is one of the solution growth techniques, has been applied to the single crystal growth of the I-III-VI₂ chalcopyrite semiconductors. It is generally difficult to grow high-quality single crystals of the I-III-VI₂ compounds from the stoichiometric melts, because most of the compounds grow through a peritectic reaction or a solid state transition during the cooling process. Up to this time, bulk single crystals of CuGaS₂, CuGaSe₂, CuGaTe₂, CuInS₂, CuInSe₂, and CuInTe₂ ternary compounds have been obtained by the THM technique using In solvent. Bulk single crystals of CuGaₓIn₁₋ₓS₂ and CuGaₓIn₁₋ₓSe₂ quaternary alloys have also been grown by the THM with In-solution zones, in which the compositions were adjusted to obtain homogenous crystals having intended compositions x. Furthermore, THM growth of AgGaS₂ and CuGaS₂ single crystals has been performed by using PbCl₂ and CuI halide solvents, respectively. | |||||
書誌情報 |
Research reports of the Faculty of Engineering, Mie University 巻 24, p. 31-44, 発行日 1999-12-27 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0385-6208 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00816341 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
その他のタイトル | ||||||
ja | ||||||
三元および多元カルコパイライト型半導体のTHM成長 | ||||||
出版者 | ||||||
出版者 | Faculty of Engineering, Mie University | |||||
資源タイプ(三重大) | ||||||
Departmental Bulletin Paper / 紀要論文 |