| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2014-09-02 |
| タイトル |
|
|
タイトル |
Catalyst-Free Growth of Amorphous Silicon Nanowires by Laser Ablation |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 著者 |
Kokai, F.
Inoue, S.
Hidaka, H.
Uchiyama, K.
Takahashi, Y.
Koshio, A.
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Amorphous silicon nanowires (NWs), 3-50 nm thick and up to 4 mu m long, were grown by room-temperature continuous wave laser ablation of Si in high-pressure (0.1-0.9 MPa) Ar gas without the addition of any catalysts. The diameter and length of the NWs increased as the pressures of the ambient Ar increased. Sphere-like Si particles with diameters of 4-110 nm were observed at the tips of grown NWs and their diameters exhibited a strong correlation with the NW diameters. We propose a stress-driven self-catalytic vapor-liquid-solid mechanism to explain the growth of the NWs. |
| 書誌情報 |
Applied Physics A : Materials Science and Processing
巻 112,
号 1,
p. 1-7,
発行日 2013-07-01
|
| ISSN |
|
|
収録物識別子タイプ |
PISSN |
|
収録物識別子 |
0947-8396 |
| DOI |
|
|
関連タイプ |
isVersionOf |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
10.1007/s00339-012-7169-y |
| フォーマット |
|
|
内容記述タイプ |
Other |
|
内容記述 |
application/pdf |
| 著者版フラグ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 出版者 |
|
|
出版者 |
Springer Verlag |
| 関係URI |
|
|
|
関連名称 |
http://link.springer.com/article/10.1007%2Fs00339-012-7169-y |
| 資源タイプ（三重大） |
|
|
値 |
Journal Article / 学術雑誌論文 |
40A17015.pdf (1.1 MB)
