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GaAsエピタキシャル成長における吸着-脱離現象への理論的アプローチ(<小特集>結晶成長理論の最近の動向)
http://hdl.handle.net/10076/8499
http://hdl.handle.net/10076/849938bfe254-225d-4847-a541-95c49aadd393
名前 / ファイル | ライセンス | アクション |
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40A6573.pdf (697.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-03-03 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | GaAsエピタキシャル成長における吸着-脱離現象への理論的アプローチ(<小特集>結晶成長理論の最近の動向) | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
寒川, 義裕
× 寒川, 義裕× 伊藤, 智徳× 田口, 明仁× 白石, 賢二× 平岡, 佳子× 入澤, 寿美× 大鉢, 忠 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A newly developed ab initio-based approach was applied for understanding adsorption-desorption behavior during molecular beam epitaxial growth of GaAs. The ab initiobased approach incorporates free energy of vapor phase; therefore we can calculate how adsorption and desorption depend on growth temperature and beam equivalent pressure (BEP). Versatility of the theoretical approach was confirmed by the calculation of Ga adsorption-desorption transition temperatures and transition BEPs on Ga-rich GaAs (001)-(4×2)β2 surface. Furthermore, in order to check the feasibility of the theoretical approach for prediction of adsorption-desorption behavior of As_2 molecules, the conditions where GaAs(001)-c (4×4) reconstructed structure is stable were investigated by the calculations of stability of As-dimers on the top surface under the various temperatures and BEPs. We also applied the theoretical approach to Ga diffusion length while staying on the GaAs (001)- (2×4)β2 and - (2×4)β1 surfaces and As pressure dependence of GaAs growth rate. | |||||
書誌情報 |
日本結晶成長学会誌 巻 29, 号 1, p. 57-64, 発行日 2002-04-10 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0385-6275 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00188386 | |||||
権利 | ||||||
権利情報 | 日本結晶成長学会 | |||||
権利 | ||||||
権利情報 | 本文データは学協会の許諾に基づきCiNiiから複製したものである | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
日本十進分類法 | ||||||
主題Scheme | NDC | |||||
主題 | 450 | |||||
その他のタイトル | ||||||
Ab initio-based Approach to Adsorption-Desorption Behavior during GaAs Epitaxial Growth (<Special Issue>Recent Trend of Crystal Growth Theory) | ||||||
出版者 | ||||||
出版者 | 日本結晶成長学会 | |||||
関係URI | ||||||
関連名称 | http://ci.nii.ac.jp/naid/110002715523/ | |||||
資源タイプ(三重大) | ||||||
Journal Article / 学術雑誌論文 |